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GT25PI120C7H PDF预览

GT25PI120C7H

更新时间: 2024-11-18 17:15:39
品牌 Logo 应用领域
银茂微 - SILVERMICRO 双极性晶体管
页数 文件大小 规格书
13页 1304K
描述
PIM IGBT-1200V

GT25PI120C7H 数据手册

 浏览型号GT25PI120C7H的Datasheet PDF文件第2页浏览型号GT25PI120C7H的Datasheet PDF文件第3页浏览型号GT25PI120C7H的Datasheet PDF文件第4页浏览型号GT25PI120C7H的Datasheet PDF文件第5页浏览型号GT25PI120C7H的Datasheet PDF文件第6页浏览型号GT25PI120C7H的Datasheet PDF文件第7页 
GT25PI120C7H  
IGBT Module  
Features  
z
Trench & Field Stop IGBT  
Short Circuit Rated >10μs  
Low Saturation Voltage  
Low Switching Loss  
z
z
z
z
z
z
100% RBSOA Tested2×Ic)  
Low Stray Inductance  
Lead Free, Compliant with RoHS Requirement  
Applications:  
z
Industrial Inverters  
Industrial Drivers  
z
IGBT, Inverter  
Maximum Rated alues (TC=2unless otherwise specified)  
VCES  
VGES  
Collector-EmitteBlocking Voltage  
Gate-Emier Voltage  
1200  
±20  
25  
V
V
TC = 100℃  
TC = 25℃  
TJ = 150℃  
A
IC  
Continous Collector Current  
50  
A
ICM  
tSC  
PD  
Repetitive Peak Collector Current  
Short Circuit Withstand Time  
50  
A
>10  
234  
μs  
W
TC = 25  
TJmax=175℃  
Maximum Power Dissipation per IGBT  
www.njsme.com  
2022 NJSME All rights reserved  
Page 1 Rev. A  
01/17/2022  
SYS  

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