Datasheet > GT2623

GT2623

更新时间： 2024-11-20 04:19:55

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	334K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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中文翻译

获取价格

数据手册

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GT2623 数据手册

Pb Free Plating Product

ISSUED DATE :2005/05/06

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

-30V

170mΩ

-2.0A

GT2623

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

Description

The GT2623 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device.

The GT2623 is universally used for all commercial-industrial applications.

Features

*Low Gate Charge

*Low On-resistance

Package Dimensions

Millimeter

Dimensions

Millimeter

1.90 REF.

1.20 REF.

0.12 REF.

0.37 REF.

0.60 REF.

0.95 REF.

REF.

Min.

Max.

3.10

3.00

1.80

0.55

0.10

10°

2.70

2.60

1.40

0.30

0°

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

-30

Unit

Gate-Source Voltage

V_GS

f20

-2

Continuous Drain Current³

Pulsed Drain Current¹

I_D@T

=25к

=70к

-1.6

I_DM

-20

P_D@T

=25к

Total Power Dissipation

Linear Derating Factor

1.2

0.01

W/ć

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-a

Ratings

Unit

ć/W

Thermal Resistance Junction-ambient³Max.

110

GT2623

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