Datasheet > GT28F008B3T120

GT28F008B3T120

更新时间： 2024-11-17 22:24:23

品牌	Logo	应用领域
英特尔 - INTEL		/
页数	文件大小	规格书
49页	403K
描述
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GT28F008B3T120 数据手册

PRELIMINARY

SMART 3 ADVANCED BOOT BLOCK

BYTE-WIDE

8-MBIT (1024K x 8), 16-MBIT (2056K x 8)

FLASH MEMORY FAMILY

28F008B3, 28F016B3

Flexible SmartVoltage Technology

2.7V–3.6V Program/Erase

Extended Cycling Capability

10,000 Block Erase Cycles

2.7V–3.6V Read Operation

12V V_PPFast Production

Programming

Automated Byte Program and Block

Erase

Command User Interface

Status Registers

2.7V or 1.8V I/O Option

Reduces Overall System Power

SRAM-Compatible Write Interface

Automatic Power Savings Feature

Optimized Block Sizes

Eight 8-Kbyte Blocks for Data,

Top or Bottom Locations

Up to Thirty-One 64-Kbyte Blocks

for Code

Reset/Deep Power-Down

1 µA I_CCTypical

Spurious Write Lockout

Standard Surface Mount Packaging

48-Ball µBGA* Package

High Performance

2.7V–3.6V: 120 ns Max Access Time

40-Lead TSOP Package

Block Locking

Footprint Upgradeable

Upgradeable from 2-, 4- and 8-Mbit

Boot Block

V_CC-Level Control through WP#

Low Power Consumption

20 mA Maximum Read Current

ETOX™ V (0.4 µ) Flash Technology

Absolute Hardware-Protection

V_PP= GND Option

x8-Only Input/Output Architecture

For Space-Constrained 8-bit

Applications

V_CCLockout Voltage

Extended Temperature Operation

–40°C to +85°C

Supports Code plus Data Storage

Optimized for FDI, Flash Data

Integrator Software

Fast Program Suspend Capability

Fast Erase Suspend Capability

The new Smart 3 Advanced Boot Block, manufactured on Intel’s latest 0.4µ technology, represents a feature-

rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability

(2.7V read, program and erase) with high-speed, low-power operation. Several new features have been

added, including the ability to drive the I/O at 1.8V, which significantly reduces system active power and

interfaces to 1.8V controllers. A new blocking scheme enables code and data storage within a single device.

Add to this the Intel-developed Flash Data Integrator (FDI) software and you have the most cost-effective,

monolithic code plus data storage solution on the market today. Smart 3 Advanced Boot Block Byte-Wide

products will be available in 40-lead TSOP and 48-ball µBGA* packages. Additional information on this

product family can be obtained by accessing Intel’s WWW page: http://www.intel.com/design/flcomp

May 1997

Order Number: 290605-001

12 3 4 5 6 7...49

中文翻译

下载PDF

与GT28F008B3T120相关器件

型号	品牌	获取价格	描述	数据表
GT28F008B3T150	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
GT28F008B3T90	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
GT28F008B3TA110	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
GT28F008B3TA90	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
GT28F016B3B110	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
GT28F016B3B120	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
GT28F016B3B150	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
GT28F016B3B90	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
GT28F016B3BA110	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
GT28F016B3BA90	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

与GT28F008B3T120相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

36

产品中心

服务支持

精选活动

关于我们

帮助中心

GT28F008B3T120

GT28F008B3T120 数据手册

与GT28F008B3T120相关器件

与GT28F008B3T120相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

GT28F008B3T120

GT28F008B3T120 数据手册

与GT28F008B3T120相关器件

与GT28F008B3T120相关文章

您还可以找

您在本页遇到什么问题？