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GT28F032B3TA115 PDF预览

GT28F032B3TA115

更新时间： 2024-11-18 15:44:59
品牌 Logo 应用领域
英特尔 - INTEL 内存集成电路
页数 文件大小 规格书
48页 290K
描述
Flash, 4MX8, 115ns, PBGA47

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中文翻译

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GT28F032B3TA115 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：FBGA, BGA47,6X8,30Reach Compliance Code：unknown
风险等级：5.92最长访问时间：115 ns
启动块：TOP命令用户界面：YES
数据轮询：NOJESD-30 代码：R-PBGA-B47
JESD-609代码：e0内存密度：33554432 bit
内存集成电路类型：FLASH内存宽度：8
部门数/规模：8,63端子数量：47
字数：4194304 words字数代码：4000000
最高工作温度：85 °C最低工作温度：-40 °C
组织：4MX8封装主体材料：PLASTIC/EPOXY
封装代码：FBGA封装等效代码：BGA47,6X8,30
封装形状：RECTANGULAR封装形式：GRID ARRAY, FINE PITCH
并行/串行：PARALLEL电源：1.8/3.6,3/3.3 V
认证状态：Not Qualified部门规模：8K,64K
最大待机电流：0.000005 A子类别：Flash Memories
最大压摆率：0.055 mA表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：BALL
端子节距：0.75 mm端子位置：BOTTOM
切换位：NO类型：NOR TYPE
Base Number Matches：1

GT28F032B3TA115 数据手册

 浏览型号GT28F032B3TA115的Datasheet PDF文件第2页浏览型号GT28F032B3TA115的Datasheet PDF文件第3页浏览型号GT28F032B3TA115的Datasheet PDF文件第4页浏览型号GT28F032B3TA115的Datasheet PDF文件第5页浏览型号GT28F032B3TA115的Datasheet PDF文件第6页浏览型号GT28F032B3TA115的Datasheet PDF文件第7页 
PRELIMINARY  
E
SMART 3 ADVANCED BOOT BLOCK  
4-, 8-, 16-, 32-MBIT  
FLASH MEMORY FAMILY  
28F400B3, 28F800B3, 28F160B3, 28F320B3  
28F008B3, 28F016B3, 28F032B3  
Flexible SmartVoltage Technology  
Flash Data Integrator Software  
Flash Memory Manager  
2.7 V–3.6 V Read/Program/Erase  
12 V VPP Fast Production  
Programming  
System Interrupt Manager  
Supports Parameter Storage,  
Streaming Data (e.g., Voice)  
2.7 V or 1.65 V I/O Option  
Reduces Overall System Power  
Automated Program and Block Erase  
Status Registers  
High Performance  
2.7 V–3.6 V: 90 ns Max Access Time  
3.0 V–3.6 V: 80 ns Max Access Time  
Extended Cycling Capability  
Minimum 100,000 Block Erase  
Cycles Guaranteed  
Optimized Block Sizes  
Eight 8-KB Blocks for Data,  
Top or Bottom Locations  
Up to Sixty-Three 64-KB Blocks for  
Code  
Automatic Power Savings Feature  
Typical ICCS after Bus Inactivity  
Standard Surface Mount Packaging  
48-Ball µBGA* Package  
Block Locking  
48-Lead TSOP Package  
40-Lead TSOP Package  
VCC-Level Control through WP#  
Low Power Consumption  
Footprint Upgradeable  
Upgrade Path for 4-, 8-, 16-, and 32-  
Mbit Densities  
10 mA Typical Read Current  
Absolute Hardware-Protection  
VPP = GND Option  
ETOX™ VI (0.25 µ) Flash Technology  
VCC Lockout Voltage  
Extended Temperature Operation  
–40 °C to +85 °C  
The Smart 3 Advanced Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-  
rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability  
(2.7 V read, program and erase) with high-speed, low-power operation. Several new features have been  
added, including the ability to drive the I/O at 1.65 V, which significantly reduces system active power and  
interfaces to 1.65 V controllers. A new blocking scheme enables code and data storage within a single  
device. Add to this the Intel-developed Flash Data Integrator (FDI) software, and you have a cost-effective,  
monolithic code plus data storage solution. Smart 3 Advanced Boot Block products will be available in 40-  
lead and 48-lead TSOP and 48-ball µBGA* packages. Additional information on this product family can be  
obtained by accessing Intel’s WWW page: http://www.intel.com/design/flash.  
July 1998  
Order Number: 290580-005  
1234567...48

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