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GT28F128W18T85 PDF预览

GT28F128W18T85

更新时间： 2024-11-18 14:20:03
品牌 Logo 应用领域
恒忆 - NUMONYX 内存集成电路闪存
页数 文件大小 规格书
86页 1010K
描述
Flash, 8MX16, 85ns, PBGA56, 0.75 MM PITCH, CSP, MICRO, BGA-56

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GT28F128W18T85 技术参数

生命周期：Obsolete零件包装代码：BGA
包装说明：0.75 MM PITCH, CSP, MICRO, BGA-56针数：56
Reach Compliance Code：unknownECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.33
最长访问时间：85 ns其他特性：ALSO SUPPORTS SYNCHRONOUS OPERATION
启动块：TOPJESD-30 代码：R-PBGA-B56
长度：9 mm内存密度：134217728 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1端子数量：56
字数：8388608 words字数代码：8000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：8MX16
封装主体材料：PLASTIC/EPOXY封装代码：VFBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行：PARALLEL编程电压：1.8 V
认证状态：Not Qualified座面最大高度：1 mm
最大供电电压 (Vsup)：1.95 V最小供电电压 (Vsup)：1.7 V
标称供电电压 (Vsup)：1.8 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：BALL端子节距：0.75 mm
端子位置：BOTTOM类型：NOR TYPE
宽度：7.7 mmBase Number Matches：1

GT28F128W18T85 数据手册

 浏览型号GT28F128W18T85的Datasheet PDF文件第2页浏览型号GT28F128W18T85的Datasheet PDF文件第3页浏览型号GT28F128W18T85的Datasheet PDF文件第4页浏览型号GT28F128W18T85的Datasheet PDF文件第5页浏览型号GT28F128W18T85的Datasheet PDF文件第6页浏览型号GT28F128W18T85的Datasheet PDF文件第7页 
1.8 Volt Intel® Wireless Flash Memory  
(W18)  
28F320W18, 28F640W18, 28F128W18  
Preliminary Datasheet  
Product Features  
■ High Performance  
■ Software  
— 5 µs (Typ) Program Suspend  
— 70 ns Initial Access Speed  
— 14 ns Clock to Data Output Zero Wait-State  
— 5 µs (Typ) Erase Suspend  
— Intel® Flash Data Integrator (IFDI) Software  
Optimized  
Synchronous Burst Mode  
— 20 ns Page Mode Read Speed  
— 4-, 8-, and Continuous Word Burst Modes  
— Burst and Page Modes in Both Parameter and  
Main Partitions  
— Intel Basic Command Set Compatible  
— Common Flash Interface (CFI)  
■ Quality and Reliability  
— Programmable WAIT Configuration  
— Enhanced Factory Programming Mode:  
3.50 µs/Word (Typ)  
— Glueless 12 V interface for Fast Factory  
Programming @ 8 µs/Word (Typ)  
— 1.8 V Low-Power Programming @ 12 µs/Word  
(Typ)  
— Extended Temperature –40 °C to +85 °C  
— Minimum 100K Block Erase Cycles  
— ETOX™ VII Flash Technology (0.18 µm)  
■ Security  
— Two 64-bit Protection Registers: 64 Unique  
Device Identifier Bits; 64 User-Programmable  
OTP Bits  
— Program or Erase during Reads  
■ Architecture  
— Absolute Write Protection  
V
= GND  
PP  
— Erase/Program Lockout during Power  
— Multiple 4-Mbit Partitions  
Transitions  
— Dual-Operation: RWW or RWE (Read-While -  
— Individual Dynamic Zero-Latency Block  
Locking  
■ Density and Packaging  
Write or Read-While-Erase)  
— Eight, 4-Kword Parameter Code/Data Blocks  
— 32-Kword Main Code/Data Blocks  
— Top and Bottom Parameter Configurations  
■ Power Operation  
— 32-Mbit in a VF BGA Package  
— 64-Mbit and 128-Mbit in µBGA*Package  
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch  
µBGA* and VF BGA Packages  
— 16-Bit Wide Data Bus  
— 1.65 V to 1.95 V Read and Write Operations  
— 1.7 V to 2.24 V V  
for I/O Isolation  
CCQ  
— Standby Current: 5 µA (Typ)  
— 40/52/66 MHz 4-word Sync Read  
Current: 7 mA (Typ)  
The 1.8 Volt Intel® Wireless Flash memory with flexible multi-partition dual-operation provides high-  
performance asynchronous and synchronous burst reads. It is an ideal memory for low-voltage burst CPUs.  
Combining high read performance with flash memory’s intrinsic non-volatility, 1.8 Volt Intel® Wireless Flash  
memory eliminates the traditional system-performance paradigm of shadowing redundant code memory from  
slow nonvolatile storage to faster execution memory. It reduces the total memory requirement that increases  
reliability and reduces overall system power consumption and cost.  
The 1.8 Volt Intel® Wireless Flash memory’s flexible multi-partition architecture allows programming or erasing  
to occur in one partition while reading from another partition. This allows for higher data write throughput  
compared to single partition architectures. The dual-operation architecture also allows two processors to  
interleave code operations while program and erase operations take place in the background. The designer can  
also choose the size of the code and data partitions via the flexible multi-partition architecture.  
The 1.8 Volt Intel® Wireless Flash memory is manufactured on Intel® 0.18 µm ETOX™ VII process technology.  
It is available in µBGA and VF BGA packages, which are ideal for board-constrained applications.  
Notice: This document contains preliminary information on new products in production. The  
specifications are subject to change without notice. Verify with your local Intel sales office that  
you have the latest datasheet before finalizing a design.  
Order Number: 290701-002  
January 2001  
1234567...86

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