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GT28F128W18TD80

更新时间： 2024-11-18 03:12:35
品牌 Logo 应用领域
英特尔 - INTEL 闪存无线
页数 文件大小 规格书
100页 1116K
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Intel㈢ Wireless Flash Memory

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GT28F128W18TD80 数据手册

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Intel® Wireless Flash Memory (W18)  
28F320W18, 28F640W18, 28F128W18  
Datasheet  
Product Features  
■ High Performance Read-While-Write/  
Erase  
■ Architecture  
—Multiple 4-Mbit Partitions  
—Dual Operation: RWW or RWE  
—8KB parameter blocks  
—64KB main blocks  
—Top or Bottom Parameter Devices  
—16-bit wide data bus  
—Burst frequency at 66 MHz  
—60 ns Initial Access Read Speed  
—11 ns Burst-Mode Read Speed  
—20 ns Page-Mode Read Speed  
—4-, 8-, 16-, and Continuous-Word Burst  
Mode Reads  
—Burst and Page Mode Reads in all  
Blocks, across all partition boundaries  
—Burst Suspend Feature  
■ Software  
—5 µs (typ.) Program and Erase Suspend  
Latency Time  
—Flash Data Integrator (FDI) and Common  
Flash Interface (CFI) Compatible  
—Programmable WAIT Signal Polarity  
—Enhanced Factory Programming at  
3.1 µs/word (typ.for 0.13 µm)  
■ Security  
■ Packaging and Power  
—0.13 µm: 32-, 64-, and 128-Mbit in VF  
BGA Package; 128-Mbit in QUAD+  
Package  
—128-bit Protection Register  
—64-bits Unique Programmed by Intel  
—64-bits User-Programmable  
—Absolute Write Protection with VPP at  
Ground  
—Individual and Instantaneous Block  
Locking/Unlocking with Lock-Down  
Capability  
—0.18 µm: 32- and 128-Mbit Densities in  
VF BGA Package; 64-Mbit Density in  
µBGA* Package  
—56 Active Ball Matrix, 0.75 mm Ball-  
Pitch  
■ Quality and Reliability  
—VCC = 1.70 V to 1.95 V  
—VCCQ = 1.70 V to 2.24 V or 1.35 V to  
1.80 V  
—Standby current (0.13 µm): 8µA (typ.)  
—Read current: 7mA (typ.)  
—Temperature Range: –40 °C to +85 °C  
—100k Erase Cycles per Block  
—0.13 µm ETOX™ VIII Process  
—0.18 µm ETOX™ VII Process  
The Intel® Wireless Flash Memory (W18) device with flexible multi-partition dual operation,  
provides high-performance asynchronous and synchronous burst reads. It is an ideal memory for  
low-voltage burst CPUs. Combining high read performance with flash memory’s intrinsic non-  
volatility, the W18 device eliminates the traditional system-performance paradigm of shadowing  
redundant code memory from slow nonvolatile storage to faster execution memory. It reduces  
the total memory requirement that increases reliability and reduces overall system power  
consumption and cost.  
The W18 device’s flexible multi-partition architecture allows programming or erasing to occur  
in one partition while reading from another partition. This allows for higher data write  
throughput compared to single partition architectures. The dual-operation architecture also  
allows two processors to interleave code operations while program and erase operations take  
place in the background. The designer can also choose the size of the code and data partitions via  
the flexible multi-partition architecture.  
Notice: This document contains information on new products in production. The specifications  
are subject to change without notice. Verify with your local Intel sales office that you have the  
latest datasheet before finalizing a design.  
290701-009  
December 2003  
1234567...100

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