Datasheet > GT28F128W18TD60

GT28F128W18TD60

更新时间： 2024-11-21 03:12:35

品牌	Logo	应用领域
英特尔 - INTEL		闪存无线
页数	文件大小	规格书
100页	1116K
描述
Intel㈢ Wireless Flash Memory

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GT28F128W18TD60 数据手册

Intel^®Wireless Flash Memory (W18)

28F320W18, 28F640W18, 28F128W18

Datasheet

Product Features

■ High Performance Read-While-Write/

Erase

■ Architecture

—Multiple 4-Mbit Partitions

—Dual Operation: RWW or RWE

—8KB parameter blocks

—64KB main blocks

—Top or Bottom Parameter Devices

—16-bit wide data bus

—Burst frequency at 66 MHz

—60 ns Initial Access Read Speed

—11 ns Burst-Mode Read Speed

—20 ns Page-Mode Read Speed

—4-, 8-, 16-, and Continuous-Word Burst

Mode Reads

—Burst and Page Mode Reads in all

Blocks, across all partition boundaries

—Burst Suspend Feature

■ Software

—5 µs (typ.) Program and Erase Suspend

Latency Time

—Flash Data Integrator (FDI) and Common

Flash Interface (CFI) Compatible

—Programmable WAIT Signal Polarity

—Enhanced Factory Programming at

3.1 µs/word (typ.for 0.13 µm)

■ Security

■ Packaging and Power

—0.13 µm: 32-, 64-, and 128-Mbit in VF

BGA Package; 128-Mbit in QUAD+

Package

—128-bit Protection Register

—64-bits Unique Programmed by Intel

—64-bits User-Programmable

—Absolute Write Protection with V_PPat

Ground

—Individual and Instantaneous Block

Locking/Unlocking with Lock-Down

Capability

—0.18 µm: 32- and 128-Mbit Densities in

VF BGA Package; 64-Mbit Density in

µBGA* Package

—56 Active Ball Matrix, 0.75 mm Ball-

Pitch

■ Quality and Reliability

—V_CC= 1.70 V to 1.95 V

—V_CCQ= 1.70 V to 2.24 V or 1.35 V to

1.80 V

—Standby current (0.13 µm): 8µA (typ.)

—Read current: 7mA (typ.)

—Temperature Range: –40 °C to +85 °C

—100k Erase Cycles per Block

—0.13 µm ETOX™ VIII Process

—0.18 µm ETOX™ VII Process

The Intel^®Wireless Flash Memory (W18) device with flexible multi-partition dual operation,

provides high-performance asynchronous and synchronous burst reads. It is an ideal memory for

low-voltage burst CPUs. Combining high read performance with flash memory’s intrinsic non-

volatility, the W18 device eliminates the traditional system-performance paradigm of shadowing

redundant code memory from slow nonvolatile storage to faster execution memory. It reduces

the total memory requirement that increases reliability and reduces overall system power

consumption and cost.

The W18 device’s flexible multi-partition architecture allows programming or erasing to occur

in one partition while reading from another partition. This allows for higher data write

throughput compared to single partition architectures. The dual-operation architecture also

allows two processors to interleave code operations while program and erase operations take

place in the background. The designer can also choose the size of the code and data partitions via

the flexible multi-partition architecture.

Notice: This document contains information on new products in production. The specifications

are subject to change without notice. Verify with your local Intel sales office that you have the

latest datasheet before finalizing a design.

290701-009

December 2003

12 3 4 5 6 7...100

中文翻译

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与GT28F128W18TD60相关器件

型号	品牌	获取价格	描述	数据表
GT28F128W18TD80	INTEL	获取价格	Intel㈢ Wireless Flash Memory
GT28F160B3B110	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
GT28F160B3B120	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
GT28F160B3-B120	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
GT28F160B3B150	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
GT28F160B3-B150	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
GT28F160B3B90	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
GT28F160B3BA110	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
GT28F160B3BA90	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
GT28F160B3T110	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

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