GT28F008B3B110

更新时间： 2024-11-17 21:55:03

品牌	Logo	应用领域
英特尔 - INTEL		/
页数	文件大小	规格书
58页	844K
描述
3 Volt Advanced Boot Block Flash Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GT28F008B3B110 数据手册

3 Volt Advanced Boot Block Flash

Memory

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

Preliminary Datasheet

Product Features

■ Flexible SmartVoltage Technology

—2.7 V–3.6 V Read/Program/Erase

—12 V V_PPFast Production Programming

■ 2.7 V or 1.65 V I/O Option

—Reduces Overall System Power

■ High Performance

■ Intel^®Flash Data Integrator Software

—Flash Memory Manager

—System Interrupt Manager

—Supports Parameter Storage, Streaming

Data (e.g., Voice)

■ Extended Cycling Capability

—Minimum 100,000 Block Erase Cycles

Guaranteed

—2.7 V–3.6 V: 70 ns Max Access Time

■ Optimized Block Sizes

■ Automatic Power Savings Feature

—Typical I_CCSafter Bus Inactivity

■ Standard Surface Mount Packaging

—48-Ball CSP Packages

—Eight 8-KB Blocks for Data,Top or

Bottom Locations

—Up to One Hundred Twenty-Seven 64-

KB Blocks for Code

■ Block Locking

—40- and 48-Lead TSOP Packages

—V_CC-Level Control through WP#

■ Low Power Consumption

—9 mA Typical Read Current

■ Absolute Hardware-Protection

—V_PP= GND Option

■ Density and Footprint Upgradeable for

common package

—4-, 8-, 16-, 32- and 64-Mbit Densities

■ ETOX™ VII (0.18 µ) Flash Technology

—28F160/320/640B3xC

—4-, 8-, 16-, and 32-Mbit also exist on

ETOX™ V (0.4µ) and/or ETOX ™ VI

(0.25µ) Flash Technology

—V_CCLockout Voltage

■ Extended Temperature Operation

—–40 °C to +85 °C

■ x8 not recommended for new designs

■ Automated Program and Block Erase

—Status Registers

■ 4-Mbit density not recommended for new

designs

The 3 Volt Advanced Boot Block flash memory, manufactured on Intel’s latest 0.18 µm

technology, represents a feature-rich solution at overall lower system cost. The 3 Volt Advanced

Boot Block flash memory products in x16 will be available in 48-lead TSOP and 48-ball CSP

packages. The x8 option of this product family will only be available in 40-lead TSOP and 48-

ball µBGA* packages. Additional information on this product family can be obtained by

accessing Intel’s website at: http://www.intel.com/design/flash.

Notice: This document contains preliminary information on new products in production. The

specifications are subject to change without notice. Verify with your local Intel sales office that

you have the latest datasheet before finalizing a design.

Order Number: 290580-012

October 2000

12 3 4 5 6 7...58

中文翻译

下载PDF

与GT28F008B3B110相关器件

型号	品牌	获取价格	描述	数据表
GT28F008B3B120	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
GT28F008B3B150	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
GT28F008B3B90	INTEL	获取价格	3 Volt Advanced Boot Block Flash Memory
GT28F008B3BA110	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
GT28F008B3BA90	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
GT28F008B3T110	INTEL	获取价格	3 Volt Advanced Boot Block Flash Memory
GT28F008B3T120	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
GT28F008B3T150	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
GT28F008B3T90	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
GT28F008B3TA110	INTEL	获取价格	SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

与GT28F008B3B110相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

36

产品中心

服务支持

精选活动

关于我们

帮助中心

GT28F008B3B110

GT28F008B3B110 数据手册

与GT28F008B3B110相关器件

与GT28F008B3B110相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

GT28F008B3B110

GT28F008B3B110 数据手册

与GT28F008B3B110相关器件

与GT28F008B3B110相关文章

您还可以找

您在本页遇到什么问题？