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GS8672D37BGE-333I PDF预览

GS8672D37BGE-333I

更新时间: 2024-09-16 00:45:47
品牌 Logo 应用领域
GSI 静态存储器内存集成电路
页数 文件大小 规格书
28页 483K
描述
JEDEC-standard pinout and package

GS8672D37BGE-333I 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:LBGA,针数:165
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41Factory Lead Time:12 weeks
风险等级:5.84最长访问时间:0.45 ns
其他特性:PIPELINE ARCHITECTUREJESD-30 代码:R-PBGA-B165
长度:17 mm内存密度:75497472 bit
内存集成电路类型:STANDARD SRAM内存宽度:36
功能数量:1端子数量:165
字数:2097152 words字数代码:2000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX36
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.5 mm最大供电电压 (Vsup):1.9 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
宽度:15 mm

GS8672D37BGE-333I 数据手册

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GS8672D19/37BE-450/400/375/333/300  
165-Bump BGA  
Commercial Temp  
Industrial Temp  
450 MHz–300 MHz  
1.8 V V  
TM  
72Mb SigmaQuad -II+  
DD  
TM  
1.5 V I/O  
Burst of 4 ECCRAM  
Features  
Clocking and Addressing Schemes  
• 2.0 Clock Latency  
The GS8672D19/37BE SigmaQuad-II+ ECCRAMs are  
synchronous devices. They employ two input register clock  
inputs, K and K. K and K are independent single-ended clock  
inputs, not differential inputs to a single differential clock input  
buffer.  
• On-Chip ECC with virtually zero SER  
• Simultaneous Read and Write SigmaQuad™ Interface  
• JEDEC-standard pinout and package  
• Dual Double Data Rate interface  
• Byte Write Capability  
• Burst of 4 Read and Write  
• On-Die Termination (ODT) on Data (D), Byte Write (BW),  
and Clock (K, K) outputs  
• 1.8 V +100/–100 mV core power supply  
• 1.5 V HSTL Interface  
• Pipelined read operation  
• Fully coherent read and write pipelines  
• ZQ pin for programmable output drive strength  
• IEEE 1149.1 JTAG-compliant Boundary Scan  
• Pin-compatible with 18Mb, 36Mb and 144Mb devices  
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package  
• RoHS-compliant 165-bump BGA package available  
Each internal read and write operation in a SigmaQuad-II+ B4  
ECCRAM is four times wider than the device I/O bus. An  
input data bus de-multiplexer is used to accumulate incoming  
data before it is simultaneously written to the memory array.  
An output data multiplexer is used to capture the data produced  
from a single memory array read and then route it to the  
appropriate output drivers as needed. Therefore the address  
field of a SigmaQuad-II+ B4 ECCRAM is always two address  
pins less than the advertised index depth (e.g., the 4M x18 has  
a 1M addressable index).  
On-Chip Error Correction Code  
GSI's ECCRAMs implement an ECC algorithm that detects  
and corrects all single-bit memory errors, including those  
induced by Soft Error Rate (SER) events such as cosmic rays,  
alpha particles. The resulting SER of these devices is  
anticipated to be <0.002 FITs/Mb — a 5-order-of-magnitude  
improvement over comparable ECCRAMs with no On-Chip  
ECC, which typically have an SER of 200 FITs/Mb or more.  
SER quoted above is based on reading taken at sea level.  
SigmaQuadECCRAM Overview  
The GS8672D19/37BE are built in compliance with the  
SigmaQuad-II+ ECCRAM pinout standard for Separate I/O  
synchronous ECCRAMs. They are 75,497,472-bit (72Mb)  
ECCRAMs. The GS8672D19/37BE SigmaQuad ECCRAMs  
are just one element in a family of low power, low voltage  
HSTL I/O ECCRAMs designed to operate at the speeds needed  
to implement economical high performance networking  
systems.  
However, the On-Chip Error Correction (ECC) will be  
disabled if a “Half Write” operation is initiated. See the Byte  
Write Contol section for further information.  
Parameter Synopsis  
-450  
2.2 ns  
0.45 ns  
-400  
-375  
-333  
3.0 ns  
0.45 ns  
-300  
3.3 ns  
0.45 ns  
tKHKH  
tKHQV  
2.5 ns  
2.67 ns  
0.45 ns  
0.45 ns  
Rev: 1.02c 8/2017  
1/28  
© 2011, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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