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GS8672Q18AE-300T PDF预览

GS8672Q18AE-300T

更新时间: 2024-11-07 09:04:31
品牌 Logo 应用领域
GSI 静态存储器内存集成电路
页数 文件大小 规格书
27页 813K
描述
Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FBGA-165

GS8672Q18AE-300T 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:LBGA,针数:165
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:0.45 ns其他特性:PIPELINED ARCHITECTURE
JESD-30 代码:R-PBGA-B165长度:17 mm
内存密度:75497472 bit内存集成电路类型:STANDARD SRAM
内存宽度:18功能数量:1
端子数量:165字数:4194304 words
字数代码:4000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4MX18封装主体材料:PLASTIC/EPOXY
封装代码:LBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1.5 mm
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM宽度:15 mm
Base Number Matches:1

GS8672Q18AE-300T 数据手册

 浏览型号GS8672Q18AE-300T的Datasheet PDF文件第2页浏览型号GS8672Q18AE-300T的Datasheet PDF文件第3页浏览型号GS8672Q18AE-300T的Datasheet PDF文件第4页浏览型号GS8672Q18AE-300T的Datasheet PDF文件第5页浏览型号GS8672Q18AE-300T的Datasheet PDF文件第6页浏览型号GS8672Q18AE-300T的Datasheet PDF文件第7页 
Preliminary  
GS8672Q18/36AE-333/300/250/200  
333 MHz–200 MHz  
165-Bump BGA  
Commercial Temp  
Industrial Temp  
72Mb SigmaQuad-II™  
Burst of 2 ECCRAM™  
1.8 V V  
DD  
1.8 V and 1.5 V I/O  
Features  
Clocking and Addressing Schemes  
• On-Chip ECC with virtually zero SER  
• Simultaneous Read and Write SigmaQuad™ Interface  
• JEDEC-standard pinout and package  
• Dual Double Data Rate interface  
• Byte Write Capability  
• Burst of 2 Read and Write  
• 1.8 V +100/–100 mV core power supply  
• 1.5 V or 1.8 V HSTL Interface  
• Pipelined read operation  
• Fully coherent read and write pipelines  
• ZQ pin for programmable output drive strength  
• IEEE 1149.1 JTAG-compliant Boundary Scan  
• Pin-compatible with present 9Mb, 18Mb, and 36Mb and  
144Mb devices  
The GS8672Q18/36AE SigmaQuad-II ECCRAMs are  
synchronous devices. They employ two input register clock  
inputs, K and K. K and K are independent single-ended clock  
inputs, not differential inputs to a single differential clock input  
buffer. The device also allows the user to manipulate the  
output register clock inputs quasi independently with the C and  
C clock inputs. C and C are also independent single-ended  
clock inputs, not differential inputs. If the C clocks are tied  
High, the K clocks are routed internally to fire the output  
registers instead.  
Because Separate I/O SigmaQuad-II B2 ΕCCRAMs always  
transfer data in two packets, A0 is internally set to 0 for the  
first read or write transfer, and automatically incremented by 1  
for the next transfer. Because the LSB is tied off internally, the  
address field of a SigmaQuad-II B2 ECCRAM is always one  
address pin less than the advertised index depth (e.g., the 4M x  
18 has a 2048K addressable index).  
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package  
• RoHS-compliant 165-bump BGA package available  
SigmaQuadECCRAM Overview  
The GS8672Q18/36AE SigmaQuad-II ECCRAMs are built in  
compliance with the SigmaQuad-II SRAM pinout standard for  
Separate I/O synchronous SRAMs. They are 75,497,472-bit  
(72Mb) ECCRAMs. The GS8672Q18/36AE SigmaQuad-II  
ECCRAMs are just one element in a family of Low power,  
Low voltage HSTL I/O ECCRAMs designed to operate at the  
speeds needed to implement economical High performance  
networking systems.  
On-Chip Error Correction Code  
GSI's ECCRAMs implement an ECC algorithm that detects  
and corrects all single-bit memory errors, including those  
induced by Soft Error Rate (SER) events such as cosmic rays,  
alpha particles. The resulting SER of these devices is  
anticipated to be <0.002 FITs/Mb — a 5-order-of-magnitude  
improvement over comparable SRAMs with no On-Chip ECC,  
which typically have an SER of 200 FITs/Mb or more. SER  
quoted above is based on reading taken at sea level.  
However, the On-Chip Error Correction (ECC) will be  
disabled if a “Half Write” operation is initiated. See the Byte  
Write Contol section for further information.  
Parameter Synopsis  
-333  
3.0 ns  
0.45 ns  
-300  
3.3 ns  
0.45 ns  
-250  
4.0 ns  
0.45 ns  
-200  
5.0 ns  
0.45 ns  
tKHKH  
tKHQV  
Rev: 1.02 5/2010  
1/27  
© 2010, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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