Datasheet > GS8672D38BGE-550I

GS8672D38BGE-550I

更新时间： 2024-11-07 00:43:51

品牌	Logo	应用领域
GSI		时钟静态存储器内存集成电路
页数	文件大小	规格书
30页	483K
描述
72Mb SigmaQuad-IITM Burst of 4 ECCRAMTM

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GS8672D38BGE-550I 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	LBGA, BGA165,11X15,40	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.B	Factory Lead Time：	12 weeks
风险等级：	5.82	最长访问时间：	0.45 ns
最大时钟频率 (fCLK)：	550 MHz	I/O 类型：	SEPARATE
JESD-30 代码：	R-PBGA-B165	长度：	17 mm
内存密度：	75497472 bit	内存集成电路类型：	STANDARD SRAM
内存宽度：	36	功能数量：	1
端子数量：	165	字数：	2097152 words
字数代码：	2000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	2MX36	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	LBGA
封装等效代码：	BGA165,11X15,40	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	电源：	1.5,1.8 V
认证状态：	Not Qualified	座面最大高度：	1.5 mm
最小待机电流：	1.7 V	子类别：	SRAMs
最大压摆率：	2.46 mA	最大供电电压 (Vsup)：	1.9 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	15 mm

GS8672D38BGE-550I 数据手册

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GS8672D20/38BE-633/550/500/450/400

72Mb SigmaQuad-II+^TM

Burst of 4 ECCRAM^TM

633 MHz–400 MHz

165-Bump BGA

Commercial Temp

Industrial Temp

1.8 V V

1.5 V I/O

Features

Clocking and Addressing Schemes

• 2.5 Clock Latency

The GS8672D20/38BE SigmaQuad-II+ ECCRAMs are

synchronous devices. They employ two input register clock

inputs, K and K. K and K are independent single-ended clock

inputs, not differential inputs to a single differential clock input

buffer.

• On-Chip ECC with virtually zero SER

• Simultaneous Read and Write SigmaQuad™ Interface

• JEDEC-standard package

• Dual Double Data Rate interface

• Byte Write Capability

• Burst of 4 Read and Write

• On-Die Termination (ODT) on Data (D), Byte Write (BW),

and Clock (K, K) outputs

• 1.8 V +100/–100 mV core power supply

• 1.5 V HSTL Interface

• Pipelined read operation

• Fully coherent read and write pipelines

• ZQ pin for programmable output drive strength

• IEEE 1149.1 JTAG-compliant Boundary Scan

• Pin-compatible with 36Mb and144Mb devices

• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package

• RoHS-compliant 165-bump BGA package available

Each internal read and write operation in a SigmaQuad-II+ B4

ECCRAM is four times wider than the device I/O bus. An

input data bus de-multiplexer is used to accumulate incoming

data before it is simultaneously written to the memory array.

An output data multiplexer is used to capture the data produced

from a single memory array read and then route it to the

appropriate output drivers as needed. Therefore the address

field of a SigmaQuad-II+ B4 ECCRAM is always two address

pins less than the advertised index depth (e.g., the 4M x18 has

a 1M addressable index).

On-Chip Error Correction Code

GSI's ECCRAMs implement an ECC algorithm that detects

and corrects all single-bit memory errors, including those

induced by Soft Error Rate (SER) events such as cosmic rays,

alpha particles. The resulting SER of these devices is

anticipated to be <0.002 FITs/Mb — a 5-order-of-magnitude

improvement over comparable SRAMs with no On-Chip ECC,

which typically have an SER of 200 FITs/Mb or more. SER

quoted above is based on reading taken at sea level.

SigmaQuad™ ECCRAM Overview

The GS8672D20/38BE are built in compliance with the

SigmaQuad-II+ ECCRAM pinout standard for Separate I/O

synchronous ECCRAMs. They are 75,497,472-bit (72Mb)

ECCRAMs. The GS8672D20/38BE SigmaQuad ECCRAMs

are just one element in a family of low power, low voltage

HSTL I/O ECCRAMs designed to operate at the speeds needed

to implement economical high performance networking

systems.

However, the On-Chip Error Correction (ECC) will be

disabled if a “Half Write” operation is initiated. See the Byte

Write Contol section for further information.

Parameter Synopsis

-633

-550

1.81 ns

0.45 ns

-500

2.0 ns

0.45 ns

-450

2.2 ns

0.45 ns

-400

2.5 ns

0.45 ns

tKHKH

tKHQV

1.57 ns

0.45 ns

Rev: 1.03c 8/2017

1/30

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...30

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与GS8672D38BGE-550I相关器件

型号	品牌	获取价格	描述	数据表
GS8672D38BGE-633	GSI	获取价格	72Mb SigmaQuad-IITM Burst of 4 ECCRAMTM
GS8672Q18AE-200	GSI	获取价格	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FBGA-165
GS8672Q18AE-200T	GSI	获取价格	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FBGA-165
GS8672Q18AE-250I	GSI	获取价格	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FBGA-165
GS8672Q18AE-250IT	GSI	获取价格	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FBGA-165
GS8672Q18AE-300	GSI	获取价格	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FBGA-165
GS8672Q18AE-300T	GSI	获取价格	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FBGA-165
GS8672Q18AE-333	GSI	获取价格	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FBGA-165
GS8672Q18AE-333I	GSI	获取价格	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FBGA-165
GS8672Q18AE-333IT	GSI	获取价格	Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FBGA-165

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