Datasheet > GM194

GM194

更新时间： 2024-09-14 04:19:39

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	329K
描述
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

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数据手册

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GM194 数据手册

ISSUED DATE :2005/10/06

REVISED DATE :

GTM

CORPORATION

GM194

The GM194 is designed for medium power amplifier applications.

Features

Ԧ60 Volt V_CEO

N P N S I L I C O N P L A N A R M E D I U M P O W E R T R A N S I S T O R

Description

Ԧ1 Amp continuous current

ԦComplementary to GM195

Package Dimensions

SOT-89

Millimeter

Min. Max.

REF.

Min.

Max.

4.4

4.6

3.00 REF.

1.50 REF.

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

0.40

1.40

0.35

0.52

1.60

0.41

5q TYP.

0.70 REF.

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

Symbol

Ratings

+150

-55~+150

Unit

Tstg

VCBO

VCEO

VEBO

200

Total Power Dissipation

Electrical Characteristics (Ta = 25к, unless otherwise stated)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

*BVCEO

BVEBO

=100uA , I

=10mA, I

=100uA ,I

B=0

CBO

CES

EBO

100

0.25

0.5

1.1

1.0

CB=60V, I

CES=60V

EB=4V, I

=50mA

=100mA

*VCE(sat)

*VBE(sat)

*VBE(on)

=500mA, IB

=1A, I

CE=5V, I

=1A

=1mA

*hFE

100

150

300

=500mA

=1A

=2A

MHz

CE=10V, I =50mA, f=100MHz

CB=10V, IE=0, f=1MHz

Cob

*Measured under pulse condition. Pulse width=300ꢀs, Duty CycleЉ2%

GM194

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