Datasheet > GM194A

GM194A

更新时间： 2024-09-15 04:19:39

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	343K
描述
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

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中文翻译

获取价格

数据手册

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GM194A 数据手册

ISSUED DATE :2006/06/07

REVISED DATE :

GTM

CORPORATION

GM194A

The GM194A is designed for medium power amplifier applications.

Features

Ԧ1 Amp continuous current

N P N S I L I C O N P L AN A R M E D I U M P O W E R T R A N S I S T O R

Description

ԦComplementary to GM195A

Package Dimensions

SOT-89

Millimeter

Min. Max.

REF.

Min.

Max.

4.4

4.6

3.00 REF.

1.50 REF.

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

0.40

1.40

0.35

0.52

1.60

0.41

5q TYP.

0.70 REF.

Absolute Maximum Ratings at Ta = 25к

Parameter

Symbol

Ratings

+150

-65~+150

Unit

Junction Temperature

Storage Temperature

Tstg

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Total Power Dissipation

CBO

VCEO

EBO

Electrical Characteristics (Ta = 25к, unless otherwise stated)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

*BVCEO

BVEBO

=100uA , I

=10mA, I

=100uA ,I

B=0

CBO

CES

EBO

100

0.3

0.5

1.1

1.0

900

CB=30V, I

CES=30V

EB=4V, I

=50mA

=100mA

*VCE(sat)

*VBE(sat)

*VBE(on)

=500mA, IB

=1A, I

CE=5V, I

=1A

=1mA

*hFE

300

200

150

=500mA

=1A

=2A

MHz

CE=10V, I =50mA, f=100MHz

CB=10V, IE=0, f=1MHz

Cob

*Measured under pulse condition. Pulse width=300ꢀs, Duty CycleЉ2%

Classification Of hFE2

Rank

Range

300 ~ 700

500 ~ 900

GM194A

Page: 1/2

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