Datasheet > GM195A

GM195A

更新时间： 2024-11-05 04:19:39

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	412K
描述
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

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数据手册

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GM195A 数据手册

ISSUED DATE :2006/06/07

REVISED DATE :

GTM

CORPORATION

GM195A

The GM195A is designed for medium power amplifier applications.

Features

Ԧ1 Amp continuous current

P N P S I L I C O N P L A N A R M E D I U M P O W E R T R A N S I S T O R

Description

ԦComplementary to GM194A

Package Dimensions

SOT-89

Millimeter

Min. Max.

REF.

Min.

Max.

4.4

4.6

3.00 REF.

1.50 REF.

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

0.40

1.40

0.35

0.52

1.60

0.41

5q TYP.

0.70 REF.

Absolute Maximum Ratings at Ta = 25к

Parameter

Symbol

Ratings

+150

-55~+150

Unit

Junction Temperature

Storage Temperature

Tstg

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Total Power Dissipation

CBO

-40

-5

-1

-2

VCEO

EBO

Electrical Characteristics (Ta = 25к, unless otherwise stated)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

*BVCEO

BVEBO

-40

-5

=-100uA , I

=-10mA, I

=-100uA ,I

B=0

CBO

CES

EBO

-100

-0.2

-0.35

-0.5

-1.1

-1.0

900

CB=-30V, I

CES=-30V

EB=-4V, IC=0

E=0

*VCE(sat)

*VBE(sat)

*VBE(on)

=-100mA, I

=-500mA, I

=-1mA

=-20mA

=-100mA

=-50mA

=-1A, I

CE=-5V, I

=-1A

*hFE

300

250

160

150

=-1mA

=-100mA

=-500mA

=-1A

=-2A

MHz

CE=-10V, I =-50mA, f=100MHz

CB=-10V, IE=0, f=1MHz

Cob

*Measured under pulse condition. Pulse width=300ꢀs, Duty CycleЉ2%

GM195A

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