Datasheet > GD75HFT60C1S

GD75HFT60C1S

更新时间： 2024-11-19 17:01:55

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
5页	185K
描述
C1.0.Half Bridge

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GD75HFT60C1S 数据手册

GD75HFT60C1S

IGBT Module

STARPOWER

SEMICONDUCTOR^TM

IGBT

GD75HFT60C1S

Preliminary

Molding Type Module

600V/75A 2 in one-package

General Description

STARPOWER IGBT Power Module provides ultra

low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as

UPS and SMPS.

Features

Low V_CE(sat)trench IGBT technology

Low switching losses

5μs short circuit capability

V_CE(sat)with positive temperature coefficient

Maximum junction temperature 175℃

Low inductance case

Fast & soft reverse recovery anti-parallel FWD

Isolated copper baseplate using DBC technology

Equivalent Circuit Schematic

Typical Applications

UPS

Switching mode power supplies

Electronic welders

Absolute Maximum Ratings T_C=25℃unless otherwise noted

Symbol

V_CES

Description

GD75HFT60C1S

Units

Collector-Emitter Voltage

600

2010 STARPOWER Semiconductor Ltd.

7/27/2010

2/5

Preliminary

12 3 4 5

中文翻译

下载PDF

与GD75HFT60C1S相关器件

型号	品牌	获取价格	描述	数据表
GD75HFU120C1S	STARPOWER	获取价格	C1.0.Half Bridge
GD75HFU60C1S	STARPOWER	获取价格	C1.0.Half Bridge
GD75HFX170C1S	STARPOWER	获取价格	C1.0-Half Bridge
GD75HFX65C1S	STARPOWER	获取价格	C1.0-Half Bridge
GD75HFY120C1S	STARPOWER	获取价格	C1.0-Half Bridge
GD75HHU120C5S	STARPOWER	获取价格	C5.4.full bridge
GD75L	ETC	获取价格	Optoelectronic
GD75MLT60F1S	STARPOWER	获取价格	F1.2.3-level
GD75MLX65L3S	STARPOWER	获取价格	L3.1-NPC1
GD75PFL170C6S	STARPOWER	获取价格	C6.7-PIM