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GD75MLX65L3S PDF预览

GD75MLX65L3S

更新时间: 2024-11-19 17:01:03
品牌 Logo 应用领域
斯达半导体 - STARPOWER PC
页数 文件大小 规格书
11页 274K
描述
L3.1-NPC1

GD75MLX65L3S 数据手册

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GD75MLX65L3S  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD75MLX65L3S  
650V/75A 3-level in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
3-level-application.  
Features  
Low VCE(sat) Trench IGBT technology  
6μs short circuit capability  
V
CE(sat) with positive temperature coefficient  
Maximum junction temperature 175oC  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Typical Applications  
Solar power  
UPS  
3-level-application  
Equivalent Circuit Schematic  
©2019 STARPOWER Semiconductor Ltd.  
1/10/2019  
1/11  
Preliminary