5秒后页面跳转
GD75PIL120C6SN PDF预览

GD75PIL120C6SN

更新时间: 2024-11-19 17:01:15
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
13页 622K
描述
C6.3.PIM

GD75PIL120C6SN 数据手册

 浏览型号GD75PIL120C6SN的Datasheet PDF文件第2页浏览型号GD75PIL120C6SN的Datasheet PDF文件第3页浏览型号GD75PIL120C6SN的Datasheet PDF文件第4页浏览型号GD75PIL120C6SN的Datasheet PDF文件第5页浏览型号GD75PIL120C6SN的Datasheet PDF文件第6页浏览型号GD75PIL120C6SN的Datasheet PDF文件第7页 
GD75PIL120C6SN  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD75PIL120C6SN  
1200V/75A PIM in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
general inverters and UPS.  
Features  
Low VCE(sat) SPT+ IGBT technology  
10μs short circuit capability  
VCE(sat) with positive temperature coefficient  
Maximum junction temperature 175  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Typical Applications  
Inverter for motor drive  
AC and DC servo drive amplifier  
Uninterruptible power supply  
Equivalent Circuit Schematic  
©2014 STARPOWER Semiconductor Ltd.  
5/17/2014  
1/13  
ZY01