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GD75HFU120C1S PDF预览

GD75HFU120C1S

更新时间: 2024-11-22 17:01:55
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
9页 268K
描述
C1.0.Half Bridge

GD75HFU120C1S 数据手册

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GD75HFU120C1S  
IGBT Module  
STARPOWER  
SEMICONDUCTORTM  
IGBT  
GD75HFU120C1S  
Molding Type Module  
1200V/75A 2 in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
UPS and SMPS.  
Features  
Low VCE(sat) NPT IGBT technology  
Low switching losses  
10μs short circuit capability  
V
CE(sat) with positive temperature coefficient  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Equivalent Circuit Schematic  
Typical Applications  
UPS  
Switching mode power supplies  
Electronic welders  
©2011 STARPOWER Semiconductor Ltd.  
2/25/2011  
1/9  
Rev.D  

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