Datasheet > GD10NC60H

GD10NC60H

更新时间： 2024-11-25 03:39:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
14页	428K
描述
N-channel 10A - 600V - DPAK Very fast PowerMESH⑩ IGBT

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中文翻译

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数据手册

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GD10NC60H 数据手册

STGD10NC60H

N-channel 10A - 600V - DPAK

Very fast PowerMESH™ IGBT

Features

V_CE(sat)

(Max)@ 25°C @100°C

I_C

V_CES

Type

STGD10NC60H

600V

< 2.5V 10A

■ Low on-voltage drop (V

)

cesat

■ Low C

/ C

ratio (no cross-conduction

IES

RES

susceptibility)

DPAK

Description

Using the latest high voltage technology based on

a patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, the

™

PowerMESH IGBTs, with outstanding

performances. The suffix "H" identifies a family

optimized for high frequency applications in order

to achieve very high switching performances

(reduced tfall) manta in ing a low voltage drop.

Internal schematic diagram

Applications

■ High frequency motor controls

■ SMPS and PFC in both hard switch and

resonant topologies

■ Motor drivers

Order code

Part number

Marking

Package

Packaging

STGD10NC60H

GD10NC60H

DPAK

Tape & reel

April 2007

Rev 1

1/14

www.st.com

12 3 4 5 6 7...14

中文翻译

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