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GD1200HFT120C3S PDF预览

GD1200HFT120C3S

更新时间: 2024-11-26 17:01:15
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
9页 421K
描述
C3.1.Half Bridge

GD1200HFT120C3S 数据手册

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GD1200HFT120C3S  
IGBT Module  
STARPOWER  
SEMICONDUCTORTM  
IGBT  
GD1200HFT120C3S  
Preliminary  
Molding Type Module  
1200V/1200A 2 in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
high power converters.  
Features  
Low VCE(sat) Trench IGBT technology  
10μs short circuit capability  
V
CE(sat) with positive temperature coefficient  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Equivalent Circuit Schematic  
Typical Applications  
AC Inverter Drives  
Uninterruptible Power Supply  
Wind Turbines  
©2011 STARPOWER Semiconductor Ltd.  
2/12/2011  
1/9  
Preliminary