Datasheet > GD10NC60KD

GD10NC60KD

更新时间： 2024-02-07 16:16:21

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
15页	468K
描述
N-channel 600V - 10A - DPAK Short circuit rated PowerMESH TM IGBT

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GD10NC60KD 数据手册

STGD6NC60HD

N-channel 600V - 7A - DPAK

Very fast PowerMESH™ IGBT

General features

I_C

V_CE(sat)Max

@25°C

Type

V_CES

@100°C

STGD6NC60HD

600V

<2.5V

■ Low on voltage drop (V

)

cesat

■ Low C

/ C

ratio (no cross-conduction

IES

RES

susceptibility)

DPAK

■ Very soft ultra fast recovery antiparallel diode

■ High frequency operation

Description

Using the latest high voltage technology based on

a patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, the

PowerMESH™ IGBTs, with outstanding

Internal schematic diagram

performances. The suffix “H” identifies a family

optimized for high frequency application in order

to achieve very high switching performances

(reduced tfall) maintaining a low voltage drop.

Applications

■ High frequency inverters

■ SMPS and PFC in both hard switch and

resonant topologies

■ Motor drivers

Order codes

Part number

Marking

Package

Packaging

STGD6NC60HDT4

GD6NC60HD

DPAK

Tape & reel

February 2007

Rev 3

1/15

www.st.com

12 3 4 5 6 7...15

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