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GD10PJX65F1S PDF预览

GD10PJX65F1S

更新时间: 2024-11-26 17:01:31
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
12页 236K
描述
F1.1-PIM

GD10PJX65F1S 数据手册

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GD10PJX65F1S  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD10PJX65F1S  
650V/10A PIM in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
general inverters and UPS.  
Features  
Low VCE(sat) Trench IGBT technology  
6μs short circuit capability  
V
CE(sat) with positive temperature coefficient  
Maximum junction temperature 175oC  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated heatsink using DBC technology  
Typical Applications  
Inverter for motor drive  
AC and DC servo drive amplifier  
Uninterruptible power supply  
Equivalent Circuit Schematic  
©2018 STARPOWER Semiconductor Ltd.  
2/9/2018  
1/12  
Preliminary