5秒后页面跳转
GD10PJK120F3S PDF预览

GD10PJK120F3S

更新时间: 2024-09-26 17:01:03
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
12页 386K
描述
F3.0.PIM

GD10PJK120F3S 数据手册

 浏览型号GD10PJK120F3S的Datasheet PDF文件第2页浏览型号GD10PJK120F3S的Datasheet PDF文件第3页浏览型号GD10PJK120F3S的Datasheet PDF文件第4页浏览型号GD10PJK120F3S的Datasheet PDF文件第5页浏览型号GD10PJK120F3S的Datasheet PDF文件第6页浏览型号GD10PJK120F3S的Datasheet PDF文件第7页 
GD10PJK120F3S  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD10PJK120F3S  
Molding Type Module  
1200V/10A PIM in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction and switching loss as well as short  
circuit ruggedness.They are designed for the  
applications such as general inverters and UPS.  
Features  
Low VCE(sat) NPT IGBT technology  
10μs short circuit capability  
Square RBSOA  
VCE(sat) with positive temperature coefficient  
Fast & soft reverse recovery anti-parallel FWD  
Typical Applications  
Inverter for motor drive  
AC and DC servo drive amplifier  
Uninterruptible power supply  
©2013 STARPOWER Semiconductor Ltd.  
1/15/2013  
1/12  
Rev.A