5秒后页面跳转
GD10PJT120F1S_G8 PDF预览

GD10PJT120F1S_G8

更新时间: 2024-11-26 17:01:19
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
12页 409K
描述
F1.1.PIM

GD10PJT120F1S_G8 数据手册

 浏览型号GD10PJT120F1S_G8的Datasheet PDF文件第2页浏览型号GD10PJT120F1S_G8的Datasheet PDF文件第3页浏览型号GD10PJT120F1S_G8的Datasheet PDF文件第4页浏览型号GD10PJT120F1S_G8的Datasheet PDF文件第5页浏览型号GD10PJT120F1S_G8的Datasheet PDF文件第6页浏览型号GD10PJT120F1S_G8的Datasheet PDF文件第7页 
GD10PJT120F1S_G8  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD10PJT120F1S_G8  
1200V/10A PIM in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
general inverters and UPS.  
Features  
Low VCE(sat) Trench IGBT technology  
10μs short circuit capability  
V
CE(sat) with positive temperature coefficient  
Maximum junction temperature 175oC  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated heatsink using DBC technology  
Typical Applications  
Inverter for motor drive  
AC and DC servo drive amplifier  
Uninterruptible power supply  
Equivalent Circuit Schematic  
©2014 STARPOWER Semiconductor Ltd.  
11/11/2014  
1/12  
RI0A