Datasheet > GD1200HFT170A3SG

GD1200HFT170A3SG

更新时间： 2025-07-18 17:01:11

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GD1200HFT170A3SG 数据手册

GD1200HFT170A3SG

IGBT Module

STARPOWER

SEMICONDUCTOR

IGBT

GD1200HFT170A3SG

1700V/1200A 2 in one-package

General Description

STARPOWER IGBT Power Module provides ultra

low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as

high power converters.

Features



Low V_CE(sat)Trench IGBT technology

10μs short circuit capability

_CE(sat)with positive temperature coefficient

Maximum junction temperature 175℃

Low inductance case

Fast & soft reverse recovery anti-parallel FWD

AlN substrate for low thermal resistance

AlSiC baseplate for high power cycling capability

Typical Applications



High Power Converters

Motor Drivers

Wind Turbines

Equivalent Circuit Schematic

8/14/2014

1/9

FF0A

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
GD1200HFT170C3S	STARPOWER	获取价格	C3.1.Half Bridge
GD1200HFX170C3S	STARPOWER	获取价格	封装：C3; 额定电流：1200A; 芯片类型：Trench-FS Gen1; 额定电压：
GD1200SGL120C3S	STARPOWER	获取价格	C3.0.Single
GD1200SGL170C3S	STARPOWER	获取价格	C3.0-Single
GD1200SGL330A4S	STARPOWER	获取价格	A4.0.Single
GD1200SGT120A3S	STARPOWER	获取价格	A3.0.Single
GD1200SGT120C3S	STARPOWER	获取价格	C3.0.Single
GD1200SGT170A3S	STARPOWER	获取价格	A3.0.Single
GD1200SGT170C3S	STARPOWER	获取价格	C3.0.Single
GD1200SGX170A3S	STARPOWER	获取价格	封装：A3; 额定电流：1200A; 芯片类型：Trench-FS Gen1; 额定电压：