Datasheet > GBU808

GBU808

更新时间： 2024-11-24 22:48:51

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
2页	70K
描述
8.0A GLASS PASSIVATED BRIDGE RECTIFIER

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

GBU808 数据手册

GBU8005 - GBU810

8.0A GLASS PASSIVATED BRIDGE RECTIFIER

Features

Glass Passivated Die Construction

High Case Dielectric Strength of 1500VRMS

Low Reverse Leakage Current

GBU

Surge Overload Rating to 200A Peak

Ideal for Printed Circuit Board Applications

DimMin

Max

21.8

22.3

4.1

Plastic Material: UL Flammability

Classification Rating 94V-0

3.5

7.4

7.9

UL Listed Under Recognized Component

Index, File Number E94661

1.65

2.25

1.02

4.83

17.5

2.16

2.75

1.27

5.33

18.0

~ ~

Mechanical Data

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

3.2 X 45°

18.3

3.30

0.46

0.76

18.8

3.56

0.56

1.0

Polarity: Marked on Body

Mounting: Through Hole for #6 Screw

Mounting Torque: 5.0 Inch-pounds Maximum

Marking: Date Code and Type Number

Weight: 6.6 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

GBU

8005

GBU

801

GBU

802

GBU

804

GBU

806

GBU

808

GBU

810

Characteristic

Symbol

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

200

140

400

600

420

800

560

1000

700

V_R(RMS)

I_O

RMS Reverse Voltage

280

8.0

Average Rectified Output Current (Note 1) @ T_C= 100°C

Non-Repetitive Peak Forward Surge Current 8.3ms

single half sine-wave superimposed on rated load

(JEDEC Method)

I_FSM

200

1.0

Forward Voltage (per element)

@ I_F= 4.0A

V_FM

I_R

Peak Reverse Current

at Rated DC Blocking Voltage

@T_C= 25°C

@ T_C= 125°C

5.0

500

I²t Rating for Fusing (t < 8.3ms) (Note 2)

I²t

C_J

166

130

A²s

Typical Junction Capacitance per Element (Note 3)

Typical Thermal Resistance Junction to Case (Note 1)

Operating and Storage Temperature Range

R_qJC

T_j,T_STG

2.2

°C/W

°C

-55 to +150

Notes:

1. United mounted on 50 x 50 x 1.6mm copper plate heatsink.

2. Non-repetitive, for t > 1.0ms and < 8.3ms.

3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

DS21227 Rev. D-2

1 of 2

GBU8005-GBU810

中文翻译

下载PDF

GBU808 替代型号

型号	品牌	替代类型	描述	数据表
GBJ808-F	DIODES	类似代替	8.0A GLASS PASSIVATED BRIDGE RECTIFIER
GBU8K-E3/51	VISHAY	功能相似	Glass Passivated Single-Phase Bridge Rectifier
GBU8K-BP	MCC	功能相似	8 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts

与GBU808相关器件

型号	品牌	获取价格	描述	数据表
GBU8-08	FRONTIER	获取价格	8A SILICON SINGLE-PHASE BRIDGE RECTIFIERS
GBU808(LS)	DIODES	获取价格	8A GLASS PASSIVATED BRIDGE RECTIFIER
GBU808A	YANGJIE	获取价格	Bridge Rectifier
GBU808C	HY	获取价格	SILICON BRIDGE RECTIFIERS
GBU808G	DYELEC	获取价格	SINGLE PHASE 8.0AMP GLASS PASSIVATED BRIDGE RECTIFIER
GBU808G	JUXING	获取价格	BRIDGE RECTIFIERS
GBU808-G	COMCHIP	获取价格	SMD Glass Passivated Bridge Rectifiers
GBU808H	ZOWIE	获取价格	GLASS PASSIVATED BRIDGE RECTIFIER
GBU8-08-LFR	FRONTIER	获取价格	8A SILICON SINGLE-PHASE BRIDGE RECTIFIERS
GBU81	SECOS	获取价格	Voltage 50V ~ 1000V 8.0Amp Glass Passivited Bridge Rectifiers

与GBU808相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

GBU808

GBU808 数据手册

GBU808 替代型号

与GBU808相关器件

与GBU808相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

GBU808

GBU808 数据手册

GBU808 替代型号

与GBU808相关器件

与GBU808相关文章

您还可以找

您在本页遇到什么问题？