Datasheet > GBU810C

GBU810C

更新时间： 2024-11-23 04:19:31

品牌	Logo	应用领域
虹扬 - HY		/
页数	文件大小	规格书
2页	40K
描述
SILICON BRIDGE RECTIFIERS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GBU810C 数据手册

GBU8005C thru GBU810C

REVERSE VOLTAGE - 50 to 1000Volts

FORWARD CURRENT - 8.0 Amperes

SILICON BRIDGE RECTIFIERS

GBU-C

FEATURES

●Surge overload rating -200 amperes peak

.156(3.95)

.148(3.75)

.874(22.2)

.860(21.8)

3.2*3.2

CHAMFER

●Ideal for printed circuit board

●Reliable low cost construction utilizing

molded plastic technique

.154(3.9)

.146(3.7)

.752(19.1)

.720(18.3)

.232(5.9)

.224(5.7)

●Plastic material has U/L

flammability classification 94V-0

.079(2.0)

.063(1.6)

●Mounting postition:Any

.100(2.54)

.085(2.16)

.126(3.2)

.720(18.29)

.680(17.27)

.114(2.9)

.080(2.03)

.065(1.65)

.047(1.2)

.035(0.9)

.022(.56)

.018(.46)

.210 .210 .210

.190 .190 .190

(5.3) (5.3) (5.3)

(4.8) (4.8) (4.8)

Dimensions in inches and (milimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

GBU

8005C

GBU

801C

GBU

802C

GBU

804C

GBU

806C

GBU

808C

GBU

810C

SYMBOL

UNIT

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

8.0

3.2

Maximum Average Forward (with heatsink Note 2)

I(AV)

Rectified Current

@ TC=100℃ (without heatsink)

Peak Forward Surage Current

IFSM

200

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load (JEDEC Method)

1.0

Maximum Forward Voltage at 4.0A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@ TJ=25℃

500

@ TJ=125℃

I²t

A²s

I²t Rating for Fusing (t<8.3ms)

166

Typical Junction Capacitance Per Element (Note1)

Typical Thermal Resistance (Note2)

Operating Temperature Range

RθJC

℃/W

℃

2.2

-55 to +125

-55 to +150

Storage Temperature Range

TSTG

℃

NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2.Device mounted on 75mm*75mm*1.6mm cu plate heatsink.

~ 285 ~

中文翻译

下载PDF

与GBU810C相关器件

型号	品牌	获取价格	描述	数据表
GBU810-G	COMCHIP	获取价格	SMD Glass Passivated Bridge Rectifiers
GBU8-10-LFR	FRONTIER	获取价格	8A SILICON SINGLE-PHASE BRIDGE RECTIFIERS
GBU812	FCI	获取价格	8.0Amps Glass Passivated Single Phase Silico n Bridge
GBU816	JJM	获取价格	整流桥
GBU816	YANGJIE	获取价格	GBU
GBU8A	GOOD-ARK	获取价格	Glass Passivated Single-Phase Bridge Rectifiers Reverse Voltage 50 to 1000 Volts Forward C
GBU8A	TAITRON	获取价格	8 A Glass Passivated Bridge Rectifier
GBU8A	SEMIKRON	获取价格	Silicon-Bridge Rectifiers
GBU8A	VISHAY	获取价格	GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
GBU8A	DIOTEC	获取价格	Silicon-Bridge Rectifiers