Datasheet > GBU808-G

GBU808-G

更新时间： 2024-11-21 07:18:03

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
3页	80K
描述
SMD Glass Passivated Bridge Rectifiers

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中文翻译

获取价格

数据手册

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GBU808-G 数据手册

SMD Glass Passivated Bridge Rectifiers

GBU8005-G Thru. GBU810-G

Reverse Voltage: 50 to 1000V

Forward Current: 8.0A

RoHS Device

Features

GBU

-Rating to 1000V PRV

0.437(11.1)

0.430(10.9)

-Surge overload rating - 200 amperes peak.

-Ideal for printed circuit board

0.139(3.53)

0.133(3.37)

0.874(22.2)

0.860(21.8)

0.126(3.2)*45°

Chamfer

0.161(4.1)

0.134(3.4)

-Reliable low cost construction utilizing

molded plastic technique

0.232(5.90)

0.213(5.40)

0.752(19.1)

0.720(18.3)

0.401(10.2)

0.073(1.85)

0.057(1.45)

0.392(9.80)

-Plastic material has underwriters laboratory

flammability classification 94V-0

0.100(2.54)

0.085(2.16)

0.720(18.29)

0.680(17.27)

0.047(1.2)

0.035(0.9)

0.106(2.7)

0.091(2.3)

0.080(2.03)

0.065(1.65)

Mechanical Data

0.022(0.56)

0.018(0.46)

0.210(5.3)

0.190(4.8)

-Polarit:As marked on Body

0.210(5.3)

0.190(4.8)

-Mounting position:Any

0.210(5.3)

0.190(4.8)

Dimensions in inches and (millimeter)

Maximum ratings and electrical characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

GBU

8005-G

GBU

801-G

GBU

802-G

GBU

804-G

GBU

806-G

GBU

808-G

GBU

810-G

Symbol

Parameter

Unit

Maximum Reverse Peak Repetitive Voltage

RRM

RMS

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

100

1000

8.0

3.2

Maximum Average Forward (With heatsink Note2)

Rectified Current @Tc=100°C (without hestsink)

(AV)

Peak Forward Surage Current ,

8.3ms Single Half Sine-Wave

Super Imposed On Rated Load

IFSM

200

Maximum Forward Voltage Drop

Per Bridge Element at 4.0A Peak

1.1

@TJ=25°C

@TJ=125°C

Maximum Reverse Current

At Rate DC Blocking Voltage

10.0

500

μA

I²T Rating for Fusing(t<8.3ms)

I²t

166

°C/W

Typical Junction Capacitandce Per Element

(Note 1)

Typical Thermal Resistance

RθJA

2.2

°C/W

°C

Operating Temperature Range

-55 to +150

Storage Temperature Range

Notes:

TSTG

°C

1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Device mounted on 75mm*75mm*1.6mm Cu plate heatsink.

REV:A

Page 1

QW-BBR54

Comchip Technology CO., LTD.

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中文翻译

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