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GBU810AB1

更新时间: 2024-11-23 14:51:03
品牌 Logo 应用领域
扬杰 - YANGJIE 局域网二极管
页数 文件大小 规格书
4页 397K
描述
Bridge Rectifier Diode, 1 Phase, 3.2A, 1000V V(RRM), Silicon,

GBU810AB1 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:R-PSFM-T4Reach Compliance Code:unknown
风险等级:5.7其他特性:UL RECOGNIZED
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSFM-T4最大非重复峰值正向电流:200 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:3.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:1000 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

GBU810AB1 数据手册

 浏览型号GBU810AB1的Datasheet PDF文件第2页浏览型号GBU810AB1的Datasheet PDF文件第3页浏览型号GBU810AB1的Datasheet PDF文件第4页 
RoHS  
GBU8005A THRU GBU810A  
Bridge Rectifier  
COMPLIANT  
Features  
UL recognition, file #E230084  
Ideal for printed circuit boards  
High surge current capability  
Solder dip 275 °C max. 7 s, per JESD 22-B106  
Typical Applications  
General purpose use in AC/DC bridge full wave rectification for  
monitor, TV, printer, power supply, switching mode power supply,  
adapter, audio equipment, and home appliances applications.  
Mechanical Data  
ackage: GBU  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
As marked on body  
Polarity:  
~
~
(T =25Unless otherwise specified  
Maximum Ratings  
a
GBU8005A GBU801A GBU802A GBU804A GBU806A GBU808A GBU810A  
PARAMETER  
SYMBOL UNIT  
GBU8005A GBU801A GBU802A GBU804A GBU806A GBU808A GBU810A  
Device marking code  
V
Repetitive peak reverse voltage  
V
A
50  
100  
200  
400  
600  
800  
1000  
RRM  
With heatsink  
Tc =108  
8.0  
3.2  
Average rectified output current  
@60Hz sine wave, R-load  
I
O
Without heatsink  
Ta =25℃  
Surge(non-repetitive)forward current  
@60Hz half sine wave, 1 cycle, Tj=25℃  
I
A
FSM  
I2t  
200  
Current squared time  
@1ms≤t≤8.3ms Tj=25, Rating of per diode  
A2S  
166  
Storage temperature  
Junction temperature  
T
-55 ~+150  
stg  
T
j
-55 ~+150  
Dielectric strength  
@ terminals to case, AC 1 minute  
V
KV  
dis  
2.5  
8
Mounting torque  
@recommend torque5kg·cm  
Tor  
kg·cm  
T =25Unless otherwise specified)  
Electrical Characteristics  
a
TEST  
CONDITIONS  
GBU8005A GBU801A GBU802A GBU804A GBU806A GBU808A GBU810A  
PARAMETER  
SYMBOL  
UNIT  
Maximum instantaneous forward  
voltage drop per diode  
V
V
1.00  
5
F
I
=4.0A  
FM  
Maximum DC reverse current at  
rated DC blocking voltage per diode  
I
RRM  
V
=V  
μA  
RM RRM  
1 / 4  
S-B169  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  
Rev. 2.2, 28-Nov-18  

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