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GBU810 PDF预览

GBU810

更新时间: 2024-11-18 22:48:51
品牌 Logo 应用领域
美台 - DIODES 整流二极管桥式整流二极管
页数 文件大小 规格书
2页 70K
描述
8.0A GLASS PASSIVATED BRIDGE RECTIFIER

GBU810 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:not_compliant
HTS代码:8541.10.00.80风险等级:0.74
其他特性:UL RECOGNIZED最小击穿电压:1000 V
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PSFM-T4
JESD-609代码:e3最大非重复峰值正向电流:200 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:1000 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
Base Number Matches:1

GBU810 数据手册

 浏览型号GBU810的Datasheet PDF文件第2页 
GBU8005 - GBU810  
8.0A GLASS PASSIVATED BRIDGE RECTIFIER  
Features  
·
·
·
·
·
·
Glass Passivated Die Construction  
High Case Dielectric Strength of 1500VRMS  
Low Reverse Leakage Current  
GBU  
Surge Overload Rating to 200A Peak  
Ideal for Printed Circuit Board Applications  
DimMin  
Max  
21.8  
A
B
C
D
E
G
H
J
22.3  
4.1  
A
B
K
Plastic Material: UL Flammability  
Classification Rating 94V-0  
M
3.5  
7.4  
7.9  
C
·
UL Listed Under Recognized Component  
Index, File Number E94661  
1.65  
2.25  
1.02  
4.83  
17.5  
2.16  
2.75  
1.27  
5.33  
18.0  
L
J
D
+
~ ~  
-
Mechanical Data  
E
F
·
·
Case: Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
N
K
L
3.2 X 45°  
G
18.3  
3.30  
0.46  
0.76  
18.8  
3.56  
0.56  
1.0  
·
·
·
·
·
Polarity: Marked on Body  
M
N
P
P
Mounting: Through Hole for #6 Screw  
Mounting Torque: 5.0 Inch-pounds Maximum  
Marking: Date Code and Type Number  
Weight: 6.6 grams (approx.)  
H
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
GBU  
8005  
GBU  
801  
GBU  
802  
GBU  
804  
GBU  
806  
GBU  
808  
GBU  
810  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
35  
280  
8.0  
V
A
Average Rectified Output Current (Note 1) @ TC = 100°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
200  
1.0  
A
Forward Voltage (per element)  
@ IF = 4.0A  
VFM  
IR  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@TC = 25°C  
@ TC = 125°C  
5.0  
500  
mA  
I2t Rating for Fusing (t < 8.3ms) (Note 2)  
I2t  
CJ  
166  
130  
A2s  
pF  
Typical Junction Capacitance per Element (Note 3)  
Typical Thermal Resistance Junction to Case (Note 1)  
Operating and Storage Temperature Range  
RqJC  
Tj, TSTG  
2.2  
°C/W  
°C  
-55 to +150  
Notes:  
1. United mounted on 50 x 50 x 1.6mm copper plate heatsink.  
2. Non-repetitive, for t > 1.0ms and < 8.3ms.  
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
DS21227 Rev. D-2  
1 of 2  
GBU8005-GBU810  

GBU810 替代型号

型号 品牌 替代类型 描述 数据表
PBU802 DIODES

完全替代

8.0A BRIDGE RECTIFIER
GBU801 DIODES

类似代替

8.0A GLASS PASSIVATED BRIDGE RECTIFIER
GBU8005 DIODES

类似代替

8.0A GLASS PASSIVATED BRIDGE RECTIFIER

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