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GBU808

更新时间: 2024-11-22 02:55:19
品牌 Logo 应用领域
固锝 - GOOD-ARK /
页数 文件大小 规格书
2页 755K
描述
Glass Passivated Single-Phase Bridge Rectifiers

GBU808 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSFM-T4Reach Compliance Code:compliant
风险等级:5.15最小击穿电压:800 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PSFM-T4最大非重复峰值正向电流:200 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:3.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:800 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

GBU808 数据手册

 浏览型号GBU808的Datasheet PDF文件第2页 
GBU8005 thru GBU810  
Glass Passivated Single-Phase Bridge Rectifiers  
Voltage Range 50 to 1000 Volts Forward Current 8.0 Amperes  
Features  
‹ Surge overload rating - 200 Amperes peak  
‹ Ideal for printed circuit boards  
‹ Reliable low cost construction utilizing molded plastic technique  
‹ Plastic material has Underwriters Laboratory Flammability  
Classification 94V-0  
‹ Mounting Position: Any  
Maximum Ratings and Electrical Characteristics  
Rating at 25oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Parameter  
Symbols  
GBU8005 GBU801 GBU802 GBU804 GBU806 GBU808 GBU810  
Units  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
Maximum DC blocking voltage  
100  
1000  
Maximum average forward  
(with heatsink Note 2)  
8.0  
3.2  
IF(AV)  
Amps  
rectified output current @TC=100oC (without heatsink)  
Peak forward surge current, 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
IFSM  
VF  
IR  
200.0  
1.0  
Amps  
Volt  
uA  
Max. instantaneous forward voltage drop at 4.0A DC  
Maximum DC reverse current  
@TJ=25oC  
5.0  
500.0  
at rated DC blocking voltage per element @TJ=125oC  
Rating for fusing (t<8.3ms)  
I2t  
CJ  
166  
60  
A2sec  
pF  
Typical junction capacitance per element (Note 1)  
Typical thermal resistance (Note 2)  
Operating temperature range  
RθJC  
TJ  
2.2  
oC/W  
oC  
-55 to +150  
-55 to +150  
Storage temperature range  
TSTG  
oC  
Notes:  
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC  
2. Device mounted on 100mm x 100mm x 1.6mm Cu plate heatsink  
630  

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