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GBU806C PDF预览

GBU806C

更新时间: 2024-09-13 04:19:31
品牌 Logo 应用领域
虹扬 - HY 整流二极管
页数 文件大小 规格书
2页 40K
描述
SILICON BRIDGE RECTIFIERS

GBU806C 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
Is Samacsys:NBase Number Matches:1

GBU806C 数据手册

 浏览型号GBU806C的Datasheet PDF文件第2页 
GBU8005C thru GBU810C  
REVERSE VOLTAGE - 50 to 1000Volts  
FORWARD CURRENT - 8.0 Amperes  
SILICON BRIDGE RECTIFIERS  
GBU-C  
FEATURES  
Surge overload rating -200 amperes peak  
.156(3.95)  
.148(3.75)  
.874(22.2)  
.860(21.8)  
3.2*3.2  
CHAMFER  
Ideal for printed circuit board  
Reliable low cost construction utilizing  
molded plastic technique  
.154(3.9)  
.146(3.7)  
.752(19.1)  
.720(18.3)  
.232(5.9)  
.224(5.7)  
Plastic material has U/L  
flammability classification 94V-0  
.079(2.0)  
.063(1.6)  
Mounting postition:Any  
.100(2.54)  
.085(2.16)  
.126(3.2)  
.720(18.29)  
.680(17.27)  
.114(2.9)  
.080(2.03)  
.065(1.65)  
.047(1.2)  
.035(0.9)  
.022(.56)  
.018(.46)  
.210 .210 .210  
.190 .190 .190  
(5.3) (5.3) (5.3)  
(4.8) (4.8) (4.8)  
Dimensions in inches and (milimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
GBU  
8005C  
GBU  
801C  
GBU  
802C  
GBU  
804C  
GBU  
806C  
GBU  
808C  
GBU  
810C  
SYMBOL  
UNIT  
CHARACTERISTICS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
30  
50  
100  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
V
V
V
70  
700  
Maximum DC Blocking Voltage  
100  
1000  
8.0  
3.2  
Maximum Average Forward (with heatsink Note 2)  
I(AV)  
A
Rectified Current  
@ TC=100(without heatsink)  
Peak Forward Surage Current  
IFSM  
200  
A
8.3ms Single Half Sine-Wave  
Super Imposed on Rated Load (JEDEC Method)  
1.0  
Maximum Forward Voltage at 4.0A DC  
VF  
IR  
V
10  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@ TJ=25℃  
uA  
500  
@ TJ=125℃  
I2t  
CJ  
A2s  
pF  
I2t Rating for Fusing (t<8.3ms)  
166  
60  
Typical Junction Capacitance Per Element (Note1)  
Typical Thermal Resistance (Note2)  
Operating Temperature Range  
RθJC  
TJ  
/W  
2.2  
-55 to +125  
-55 to +150  
Storage Temperature Range  
TSTG  
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2.Device mounted on 75mm*75mm*1.6mm cu plate heatsink.  
~ 285 ~  

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