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GBJ1006 PDF预览

GBJ1006

更新时间: 2024-09-19 20:31:11
品牌 Logo 应用领域
GWSEMI 局域网二极管
页数 文件大小 规格书
2页 65K
描述
Bridge Rectifier Diode, 3A, 800V V(RRM)

GBJ1006 数据手册

 浏览型号GBJ1006的Datasheet PDF文件第1页 
RATINGAND CHARACTERISTIC CURVES (GBJ1001 THRU GBJ1007)  
FIG.2-MAXIMUM NON-REPETITIVE FORWARD  
FIG.1-TYPICAL FORWARD CURRENT  
DERATING CURVE  
SURGE CURRENT  
250  
200  
150  
100  
50  
18  
Single Phase  
16  
14  
12  
10  
Half Wave 60Hz  
Resistive Or Inductive Load  
WITH HEATSINK  
8.3ms Single Half  
Sine Wave  
Tj=25 C  
8
6
4
JEDEC method  
WITHOUT HEATSINK  
2
0
0
20  
40  
60  
80 100 120 140 160  
0
1
10  
50  
100  
5
CASE TEMPERATURE,( C)  
NUMBER OF CYCLES AT 60Hz  
FIG.3-TYPICAL FORWARD  
CHARACTERISTICS  
FIG.4-TYPICAL REVERSE  
CHARACTERISTICS  
50  
50  
10  
10  
3.0  
1.0  
Tj=100 C  
3.0  
1.0  
Tj=25 C  
Pulse Width 300us  
1% Duty Cycle  
0.1  
0.1  
Tj=25 C  
.01  
.01  
0
.2  
.4  
.6  
.8 1.0 1.2 1.4  
0
20 40 60 80 100 120 140  
FORWARD VOLTAGE,(V)  
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)  

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