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GBJ1006-BP PDF预览

GBJ1006-BP

更新时间: 2024-10-28 11:50:31
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 105K
描述
10 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts

GBJ1006-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:0.98其他特性:UL RECOGNIZED
最小击穿电压:600 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.05 VJESD-30 代码:R-PSFM-T4
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:170 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

GBJ1006-BP 数据手册

 浏览型号GBJ1006-BP的Datasheet PDF文件第2页浏览型号GBJ1006-BP的Datasheet PDF文件第3页 
GBJ10005  
THRU  
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
GBJ1010  
10 Amp  
Features  
Case Material:Molded Plastic. UL Flammability  
Classificatio Rating 94-0 and MSL Rating 1  
Low forward voltage drop, high current capability.  
Glass Passivated  
Bridge Rectifier  
50 to 1000 Volts  
Ideal for printed circuit board  
Lead Free Finish/RoHS Compliant (NOTE 1)("P" Suffix  
designates RoHS Compliant. See ordering information)  
GBJ  
Maximum Ratings  
I
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
UL Recognized File # E165989  
A
H
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Reccurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
G
B
D
E
K
+
F
GBJ10005  
GBJ1001  
GBJ1002  
GBJ1004  
GBJ1006  
GBJ1008  
GBJ1010  
---  
---  
---  
---  
---  
---  
---  
35V  
70V  
100V  
200V  
400V  
600V  
800V  
1000V  
100V  
P
140V  
280V  
420V  
560V  
700V  
200V  
400V  
600V  
800V  
C
L
M
1000V  
J
N
O
O
DIMENSIONS  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
INCHES  
MM  
DIM  
A
B
C
D
E
F
G
H
I
MIN  
1.170  
.780  
.670  
.190  
.430  
.090  
.120  
.130  
.170  
.100  
.020  
.080  
.040  
.390  
MAX  
1.190  
.800  
.710  
.190  
.440  
.110  
.130  
.150  
.190  
.110  
.030  
.090  
.040  
.400  
MIN  
29.70  
19.70  
17.00  
4.70  
10.80  
2.30  
3.10  
3.40  
4.40  
2.50  
0.60  
2.00  
0.90  
9.80  
MAX  
NOTE  
Average Forward  
Current  
IF(AV)  
10 A  
Tc = 110°C  
30.30  
20.30  
18.00  
4.90  
11.20  
2.70  
3.40  
3.80  
4.80  
2.90  
0.80  
2.40  
1.10  
10.20  
7.70  
4.20  
Peak Forward Surge  
Current  
IFSM  
170A  
8.3ms, half sine  
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
IFM = 5.0A  
VF  
IR  
1.05V  
TJ = 25°C  
J
K
L
M
N
O
P
10 µA TJ = 25°C  
500uA  
TJ = 125°C  
.290  
.150  
.300  
.170  
7.30  
3.80  
Typical thermal  
resistance  
Typical Junction  
Capacitance  
ROJC  
CJ  
1.4 /W  
55 pF  
°C  
Measured at  
1.0MHz, VR=4.0V  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7  
~
~
2. Pulse Test: Pulse Width 300usec, Duty Cycle 1%  
Case Type  
www.mccsemi.com  
1 of 3  
Revision: 5  
2010/02/22  

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