Datasheet > GBJ1008-B

GBJ1008-B

更新时间： 2024-01-29 04:45:14

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	329K
描述
Rectifier Diode,

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技术参数
数据手册

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GBJ1008-B 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.32	JESD-609代码：	e0
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

GBJ1008-B 数据手册

GBJ10005

THRU

M C C

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20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

GBJ1010

10 Amp

Features

Rating to 1000V PRV

Glass Passivated

Bridge Rectifier

50 to 1000 Volts

Ideal for printed circuit board

Low forward voltage drop, high current capability.

Reliable low cost construction utilizing molded plastic

technique results in inexpensive product

• UL Recognized File # E165989

GBJ

Maximum Ratings

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

MCC

Catalog

Number

Device

Marking

Maximum

Reccurrent

Peak Reverse

Voltage

50V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

50V

GBJ10005

GBJ1001

GBJ1002

GBJ1004

GBJ1006

GBJ1008

GBJ1010

---

35V

70V

100V

200V

400V

600V

800V

1000V

100V

140V

280V

420V

560V

700V

200V

400V

600V

800V

1000V

DIMENSIONS

Electrical Characteristics @ 25°C Unless Otherwise Specified

INCHES

DIM

MIN

1.170

.780

.670

.019

.430

.090

.120

.130

MAX

1.190

.800

.710

.019

.440

.110

.130

.150

MIN

29.70

19.70

17.00

4.70

10.80

2.30

3.10

MAX

NOTE

Average Forward

Current

I_F(AV)

10 A

Tc = 110°C

30.30

20.30

18.00

4.90

11.20

2.70

Peak Forward Surge

Current

I_FSM

170A

8.3ms, half sine

Maximum

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

3.40

3.80

I^FM= 5.0A

3.40

V_F

I_R

1.05V

.170

.100

.020

.080

.040

.390

.190

.110

.030

.090

.040

.400

4.40

2.50

0.60

2.00

0.90

9.80

4.80

2.90

0.80

2.40

1.10

T_J= 25°C

10 mA TJ = 25°C

10.20

500uA

T^J= 125°C

.290

.150

.300

.170

7.30

3.80

7.70

4.20

Typical thermal

resistance

R_OJC

1.4 /W

°C

Typical Junction

Capacitance

C_J

55 pF

Measured at

1.0MHz, V_R=4.0V

*Pulse Test: Pulse Width 300msec, Duty Cycle 1%

www.mccsemi.com

Reision: 3

2002/03/24

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