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GBJ1006-TP PDF预览

GBJ1006-TP

更新时间: 2024-10-28 13:07:55
品牌 Logo 应用领域
美微科 - MCC 整流二极管桥式整流二极管局域网
页数 文件大小 规格书
2页 91K
描述
Bridge Rectifier Diode, 1 Phase, 10A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ, 4 PIN

GBJ1006-TP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.67Is Samacsys:N
其他特性:UL RECOGNIZED最小击穿电压:600 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSFM-T4
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:170 A元件数量:4
相数:1端子数量:4
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

GBJ1006-TP 数据手册

 浏览型号GBJ1006-TP的Datasheet PDF文件第2页 
GBJ10005  
THRU  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
GBJ1010  
10 Amp  
Features  
Rating to 1000V PRV  
Glass Passivated  
Bridge Rectifier  
50 to 1000 Volts  
Ideal for printed circuit board  
Low forward voltage drop, high current capability.  
Reliable low cost construction utilizing molded plastic  
technique results in inexpensive product  
GBJ  
Maximum Ratings  
I
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
A
H
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Reccurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
G
B
D
E
K
+
F
GBJ10005  
GBJ1001  
GBJ1002  
GBJ1004  
GBJ1006  
GBJ1008  
GBJ1010  
---  
---  
---  
---  
---  
---  
---  
35V  
70V  
100V  
200V  
400V  
600V  
800V  
1000V  
100V  
P
140V  
280V  
420V  
560V  
700V  
200V  
400V  
600V  
800V  
C
L
M
1000V  
J
N
O
O
DIMENSIONS  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
INCHES  
MM  
DIM  
A
B
C
D
E
F
G
H
MIN  
1.170  
.780  
.670  
.019  
.430  
.090  
.120  
.130  
MAX  
1.190  
.800  
.710  
.019  
.440  
.110  
.130  
.150  
MIN  
29.70  
19.70  
17.00  
4.70  
10.80  
2.30  
3.10  
MAX  
NOTE  
Average Forward  
Current  
IF(AV)  
10 A  
Tc = 110°C  
30.30  
20.30  
18.00  
4.90  
11.20  
2.70  
Peak Forward Surge  
Current  
IFSM  
170A  
8.3ms, half sine  
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
3.40  
3.80  
IFM = 5.0A  
3.40  
VF  
IR  
1.05V  
I
J
K
L
M
N
.170  
.100  
.020  
.080  
.040  
.390  
.190  
.110  
.030  
.090  
.040  
.400  
4.40  
2.50  
0.60  
2.00  
0.90  
9.80  
4.80  
2.90  
0.80  
2.40  
1.10  
TJ = 25°C  
10 mA TJ = 25°C  
10.20  
500uA  
TJ = 125°C  
O
P
.290  
.150  
.300  
.170  
7.30  
3.80  
7.70  
4.20  
Typical thermal  
resistance  
ROJC  
1.4 /W  
°C  
Typical Junction  
Capacitance  
CJ  
55 pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse Test: Pulse Width 300msec, Duty Cycle 1%  
www.mccsemi.com  

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