Datasheet > GAN041-650WSB

GAN041-650WSB

更新时间： 2024-09-26 11:15:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	310K
描述
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 packageProduction

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GAN041-650WSB 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.75	Base Number Matches：	1

GAN041-650WSB 数据手册

GAN041-650WSB

650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

12 January 2021

Product data sheet

1. General description

The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a

normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and

low-voltage silicon MOSFET technologies — offering superior reliability and performance.

2. Features and benefits

•

Ultra-low reverse recovery charge

•

Simple gate drive (0 V to +10 V or 12 V)

Robust gate oxide (±20 V capability)

High gate threshold voltage (+4 V) for very good gate bounce immunity

Very low source-drain voltage in reverse conduction mode

Transient over-voltage capability

3. Applications

•

Hard and soft switching converters for industrial and datacom power

Bridgeless totempole PFC

PV and UPS inverters

Servo motor drives

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

650

47.2

187

175

Unit

drain-source voltage

drain current

-55 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

V_GS= 10 V; I_D= 32 A; T_j= 25 °C;

Fig. 11

mΩ

Q_GD

gate-drain charge

total gate charge

I_D= 32 A; V_DS= 400 V; V_GS= 10 V;

T_j= 25 °C; Fig. 13; Fig. 14

6.6

Q_G(tot)

Source-drain diode

Q_rrecovered charge

I_S= 32 A; dI_S/dt = -1000 A/µs;

V_GS= 0 V; V_DS= 400 V; Fig. 20

150

12 3 4 5 6 7...12

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