Datasheet > G2SB2-E3/51

G2SB2-E3/51

更新时间： 2024-02-12 08:40:37

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	86K
描述
Glass Passivated Single-Phase Bridge Rectifier

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中文翻译

获取价格

数据手册

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G2SB2-E3/51 数据手册

G2SB20, G2SB60, G2SB80

Vishay General Semiconductor

www.vishay.com

Glass Passivated Single-Phase Bridge Rectifier

FEATURES

• UL recognition file number E54214

• Ideal for printed circuit boards

• High surge current capability

• Typical I_Rless than 0.1 μA

• High case dielectric strength

• Solder dip 275 °C max. 10 s, per JESD 22-B106

Case Type GBL

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave rectification

for monitor, TV, printer, SMPS, adapter, audio equipment,

and home appliances application.

PRIMARY CHARACTERISTICS

Package

GBL

I_F(AV)

1.5 A

MECHANICAL DATA

V_RRM

I_FSM

200 V, 600 V, 800 V

Case: GBL

80 A

5 μA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

I_R

V_Fat I_F= 0.75 V

T_Jmax.

1.0 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

150 °C

In-Line

Diode variations

Polarity: As marked on body

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

G2SB20

G2SB60

600

G2SB80

800

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

200

V_RMS

140

420

560

Maximum DC blocking voltage

V_DC

200

600

800

Maximum average forward rectified output current

at T_A= 25 °C

I_F(AV)

1.5

Peak forward surge current single sine-wave

superimposed on rated load

I_FSM

Rating for fusing (t < 8.3 ms)

I²t

A²s

°C

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

G2SB20

G2SB60

G2SB80

UNIT

Maximum instantaneous forward

voltage drop per diode

0.75 A

V_F

1.00

T_A= 25 °C

5.0

Maximum DC reverse current at

rated DC blocking voltage per diode

I_R

μA

T_A= 125 °C

300

Revision: 16-Aug-13

Document Number: 88603

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

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与G2SB2-E3/51相关器件

型号	品牌	获取价格	描述	数据表
G2SB40	GULFSEMI	获取价格	SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 1.5A
G2SB460-E	GULFSEMI	获取价格	SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 600V to 800V Current:4.0A
G2SB480-E	GULFSEMI	获取价格	SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 600V to 800V Current:4.0A
G2SB60	GULFSEMI	获取价格	SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 1.5A
G2SB60	MIC	获取价格	GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
G2SB60	VISHAY	获取价格	Glass Passivated Single-Phase Bridge Rectifier
G2SB60/1	VISHAY	获取价格	Bridge Rectifier Diode, 1.5A, 600V V(RRM),
G2SB60/22	VISHAY	获取价格	Bridge Rectifier Diode, 1 Phase, 1.5A, 600V V(RRM), Silicon, PLASTIC, CASE GBL, 4 PIN
G2SB60/51	VISHAY	获取价格	Bridge Rectifier Diode, 1 Phase, 1.5A, 600V V(RRM), Silicon, PLASTIC, CASE GBL, 4 PIN
G2SB60/51-E4	VISHAY	获取价格	DIODE 1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBL, 4 PIN, Bridge Rect

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