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G2SB80-E3/45 PDF预览

G2SB80-E3/45

更新时间: 2024-09-28 18:09:07
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 89K
描述
RECTFR BRIDGE SGL 800V 1.5A 4PIN CASE GBL - Rail/Tube

G2SB80-E3/45 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:R-PSIP-T4针数:4
Reach Compliance Code:unknownHTS代码:8541.10.00.80
风险等级:5.29其他特性:UL RECOGNIZED
最小击穿电压:800 V外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PSIP-T4JESD-609代码:e3
最大非重复峰值正向电流:80 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:800 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

G2SB80-E3/45 数据手册

 浏览型号G2SB80-E3/45的Datasheet PDF文件第2页浏览型号G2SB80-E3/45的Datasheet PDF文件第3页浏览型号G2SB80-E3/45的Datasheet PDF文件第4页 
G2SB20, G2SB60, G2SB80  
Vishay General Semiconductor  
www.vishay.com  
Glass Passivated Single-Phase Bridge Rectifier  
FEATURES  
• UL recognition file number E54214  
• Ideal for printed circuit boards  
• High surge current capability  
• Typical IR less than 0.1 μA  
~
• High case dielectric strength  
~
~
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
~
Case Type GBL  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
General purpose use in AC/DC bridge full wave rectification  
for monitor, TV, printer, SMPS, adapter, audio equipment,  
and home appliances application.  
PRIMARY CHARACTERISTICS  
Package  
GBL  
IF(AV)  
1.5 A  
MECHANICAL DATA  
VRRM  
IFSM  
200 V, 600 V, 800 V  
Case: GBL  
80 A  
5 μA  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
IR  
VF at IF = 0.75 V  
TJ max.  
1.0 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
150 °C  
In-Line  
Diode variations  
Polarity: As marked on body  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
G2SB20  
G2SB60  
600  
G2SB80  
800  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
200  
V
V
V
VRMS  
140  
420  
560  
Maximum DC blocking voltage  
VDC  
200  
600  
800  
Maximum average forward rectified output current  
at TA = 25 °C  
IF(AV)  
1.5  
80  
A
Peak forward surge current single sine-wave  
superimposed on rated load  
IFSM  
A
Rating for fusing (t < 8.3 ms)  
I2t  
27  
A2s  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
G2SB20  
G2SB60  
G2SB80  
UNIT  
Maximum instantaneous forward  
voltage drop per diode  
0.75 A  
VF  
1.00  
V
TA = 25 °C  
5.0  
Maximum DC reverse current at  
rated DC blocking voltage per diode  
IR  
μA  
TA = 125 °C  
300  
Revision: 16-Aug-13  
Document Number: 88603  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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