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G2SB80-E3/1 PDF预览

G2SB80-E3/1

更新时间: 2024-01-31 05:25:02
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 89K
描述
Bridge Rectifier Diode, 1 Phase, 1.5A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE GBL, 4 PIN

G2SB80-E3/1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:ROHS COMPLIANT, PLASTIC, CASE GBL, 4 PIN针数:4
Reach Compliance Code:unknownHTS代码:8541.10.00.80
风险等级:5.23其他特性:UL RECOGNIZED
外壳连接:ISOLATED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSIP-T4JESD-609代码:e3
最大非重复峰值正向电流:80 A元件数量:4
相数:1端子数量:4
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:800 V表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

G2SB80-E3/1 数据手册

 浏览型号G2SB80-E3/1的Datasheet PDF文件第2页浏览型号G2SB80-E3/1的Datasheet PDF文件第3页浏览型号G2SB80-E3/1的Datasheet PDF文件第4页 
G2SB20, G2SB60 & G2SB80  
Vishay General Semiconductor  
Glass Passivated Single-Phase Bridge Rectifier  
FEATURES  
• UL Recognition file number E54214  
• Ideal for printed circuit boards  
• High surge current capability  
• Typical I less than 0.1 µA  
• High case dielectric strength  
• Solder Dip 260 °C, 40 seconds  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
R
~
~
~
~
Case Type GBL  
TYPICAL APPLICATIONS  
General purpose use in ac-to-dc bridge full wave  
rectification for Monitor, TV, Printer, SMPS, Adapter,  
Audio equipment, and Home Appliances application.  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
IR  
1.5 A  
200 V, 600 V, 800 V  
80 A  
MECHANICAL DATA  
Case: GBL  
Epoxy meets UL 94V-0 flammability rating  
5 µA  
VF  
1.0 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
Tj max.  
150 °C  
E3 suffix for commercial grade  
Polarity: As marked on body  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
G2SB20  
G2SB60  
600  
G2SB80  
800  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
200  
V
V
V
VRMS  
140  
420  
560  
Maximum DC blocking voltage  
VDC  
200  
600  
800  
Maximum average forward rectified output current  
at TA = 25 °C  
IF(AV)  
1.5  
80  
A
Peak forward surge current single sine-wave  
superimposed on rated load  
IFSM  
A
Rating for fusing (t < 8.3 ms)  
I2t  
27  
A2sec  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS SYMBOL  
G2SB20  
G2SB60  
G2SB80  
UNIT  
Maximum instantaneous forward  
voltage drop per diode  
at 0.75 A  
VF  
IR  
1.00  
V
Maximum DC reverse current at  
rated DC blocking voltage per diode  
T
A = 25 °C  
5.0  
300  
µA  
T
A = 125 °C  
Document Number 88603  
10-Oct-06  
www.vishay.com  
1

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