Datasheet > G2SB80E3

G2SB80E3

更新时间： 2024-02-08 11:59:52

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	198K
描述
DIODE 1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GBL, 4 PIN, Bridge Rectifier Diode

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中文翻译

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技术参数
数据手册

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G2SB80E3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	LEAD FREE, PLASTIC, CASE GBL, 4 PIN
针数：	4	Reach Compliance Code：	unknown
风险等级：	5.7	Base Number Matches：	1

G2SB80E3 数据手册

G2SB20, G2SB60 & G2SB80

Vishay General Semiconductor

Glass Passivated Single-Phase Bridge Rectifier

Major Ratings and Characteristics

Case Type GBL

I_F(AV)

V_RRM

I_FSM

I_R

1.5 A

200 V, 600 V, 800 V

80 A

5 µA

V_F

1.0 V

T_jmax.

150 °C

Features

Mechanical Data

• UL Recognition file number E54214

• Ideal for printed circuit boards

• High surge current capability

Case: GBL

Epoxy meets UL-94V-0 Flammability rating

Terminals: Matte tin plated (E3 Suffix) leads, solder-

able per J-STD-002B and JESD22-B102D

• Typical I less than 0.1µA

Polarity: As marked on body

• High case dielectric strength

• Solder Dip 260 °C, 40 seconds

Typical Applications

General purpose use in ac-to-dc bridge full wave rec-

tification for Monitor, TV, Printer, SMPS, Adapter,

Audio equipment, and Home Appliances application

Maximum Ratings

Ratings at 25 °C ambient temperature unless otherwise specified.

Parameter

Symbol

V_RRM

G2SB20

200

G2SB60

600

G2SB80

800

Unit

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RMS

V_DC

140

200

420

600

1.5

560

800

Maximum DC blocking voltage

Maximum average forward rectified output current

at T_A= 25 °C

I_F(AV)

Peak forward surge current single sine-wave

superimposed on rated load

I_FSM

I²t

A²sec

°C

Rating for fusing (t < 8.3 ms)

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

Document Number 88603

08-Jul-05

www.vishay.com

12 3

中文翻译

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