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G2SB80/51-E4 PDF预览

G2SB80/51-E4

更新时间： 2024-02-06 17:06:05
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
2页 22K
描述
DIODE 1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBL, 4 PIN, Bridge Rectifier Diode

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G2SB80/51-E4 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active包装说明：R-PSIP-T4
针数：4Reach Compliance Code：unknown
HTS代码：8541.10.00.80风险等级：5.78
其他特性：UL RECOGNIZED配置：BRIDGE, 4 ELEMENTS
二极管元件材料：SILICON二极管类型：BRIDGE RECTIFIER DIODE
JESD-30 代码：R-PSIP-T4JESD-609代码：e0
最大非重复峰值正向电流：80 A元件数量：4
相数：1端子数量：4
最高工作温度：150 °C最低工作温度：-55 °C
最大输出电流：1.5 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大重复峰值反向电压：800 V表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

G2SB80/51-E4 数据手册

 浏览型号G2SB80/51-E4的Datasheet PDF文件第2页 
G2SB20 thru G2SB80  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Glass Passivated Single-Phase  
Bridge Rectifier  
Reverse Voltage 200 to 800V  
Forward Current 1.5A  
Case Type GBL  
0.825 (20.9)  
0.815 (20.7)  
0.125 (3.17)  
x 45 degrees  
Chamfer  
Features  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
• This series is UL listed under the Recognized  
Component Index, file number E54214  
0.421 (10.7)  
0.411 (10.4)  
0.080 (2.03)  
0.060 (1.50)  
• High case dielectric strength  
• Ideal for printed circuit boards  
• Glass passivated chip junction  
• High surge current capability  
• High temperature soldering guaranteed:  
260°C/10 seconds, 0.375 (9.5mm) lead length,  
5lbs. (2.3kg) tension  
0.098 (2.5)  
0.075 (1.9)  
0.718 (18.2)  
0.682 (17.3)  
Lead Depth  
0.095 (2.41)  
0.080 (2.03)  
0.098 (2.5)  
0.075 (1.9)  
0.022 (0.56)  
0.018 (0.46)  
0.043 (1.1)  
0.035 (0.9)  
Mechanical Data  
Case: Molded plastic body over passivated junctions  
(5.3)  
(4.8)  
0.210  
0.190  
0.040 (1.02)  
0.030 (0.76)  
Terminals: Plated leads solderable per MIL-STD-750,  
Method 2026  
Mounting Position: Any  
Weight: 0.071 oz., 2.0 g  
Packaging codes/options:  
0.140 (3.56)  
0.128 (3.25)  
0.022 (0.56)  
0.018 (0.46)  
Polarity shown on front side of case, positive lead beveled corner.  
Dimensions in inches and (millimeters)  
1/400 EA. per Bulk Tray Stack, 4K/box  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
VRRM  
VRMS  
VDC  
G2SB20  
G2SB60  
G2SB80  
Unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
200  
600  
800  
140  
420  
560  
V
Maximum DC blocking voltage  
200  
600  
800  
V
Maximum average forward  
rectified output current at TA = 25°C  
IF(AV)  
1.5  
A
Peak forward surge current single  
sine-wave superimposed on rated load (JEDEC Method)  
IFSM  
I2t  
80  
27  
A
Rating for fusing (t<8.3ms)  
A2sec  
°C/W  
°C  
RθJA  
RθJL  
40  
12  
Typical thermal resistance per leg  
Operating junction storage and temperature range  
TJ, TSTG  
–55 to +150  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
G2SB20  
G2SB60  
G2SB80  
Unit  
Maximum instantaneous forward voltage  
drop per leg at 0.75 A  
VF  
1.00  
V
Maximum DC reverse current at rated  
DC blocking voltage per leg  
TA = 25°C  
TA =125°C  
5.0  
300  
IR  
µA  
Note: (1) Unit mounted on P.C.B. with 0.5 x 0.5" (12 x 12mm) copper pads and 0.375” (9.5mm) lead length  
Document Number 88603  
21-Mar-02  
www.vishay.com  
1
12

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