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FX6KMJ-03 PDF预览

FX6KMJ-03

更新时间: 2024-09-16 14:42:15
品牌 Logo 应用领域
三菱 - MITSUBISHI 局域网开关脉冲晶体管
页数 文件大小 规格书
4页 63K
描述
Power Field-Effect Transistor, 6A I(D), 30V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

FX6KMJ-03 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):6 A最大漏极电流 (ID):6 A
最大漏源导通电阻:0.29 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):15 W
最大脉冲漏极电流 (IDM):24 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FX6KMJ-03 数据手册

 浏览型号FX6KMJ-03的Datasheet PDF文件第2页浏览型号FX6KMJ-03的Datasheet PDF文件第3页浏览型号FX6KMJ-03的Datasheet PDF文件第4页 
MITSUBISHI Pch POWER MOSFET  
FX6KMJ-03  
HIGH-SPEED SWITCHING USE  
FX6KMJ-03  
OUTLINE DRAWING  
Dimensions in mm  
10 ± 0.3  
2.8 ± 0.2  
φ 3.2 ± 0.2  
1.1 ± 0.2  
1.1 ± 0.2  
E
0.75 ± 0.15  
2.54 ± 0.25  
0.75 ± 0.15  
2.54 ± 0.25  
1
2
3
3
4V DRIVE  
1
2
3
GATE  
DRAIN  
SOURCE  
VDSS ............................................................... –30V  
1
rDS (ON) (MAX) ................................................ 0.29  
ID ...................................................................... –6A  
2
Integrated Fast Recovery Diode (TYP.) ...........40ns  
Viso ................................................................................ 2000V  
TO-220FN  
APPLICATION  
Motor control, Lamp control, Solenoid control  
DC-DC converter, etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
V
VGS = 0V  
VDS = 0V  
–30  
±20  
V
–6  
A
Drain current (Pulsed)  
Avalanche drain current (Pulsed)  
Source current  
IDM  
IDA  
–24  
A
L = 30µH  
–6  
A
IS  
–6  
A
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Isolation voltage  
ISM  
–24  
A
PD  
15  
W
°C  
°C  
V
Tch  
–55 ~ +150  
–55 ~ +150  
2000  
2.0  
Tstg  
Viso  
AC for 1minute, Terminal to case  
Typical value  
Weight  
g
Jan.1999  

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