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FX6KMJ-3 PDF预览

FX6KMJ-3

更新时间: 2024-11-19 07:00:51
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体开关晶体管脉冲局域网
页数 文件大小 规格书
7页 204K
描述
High-Speed Switching Use Pch Power MOS FET

FX6KMJ-3 数据手册

 浏览型号FX6KMJ-3的Datasheet PDF文件第2页浏览型号FX6KMJ-3的Datasheet PDF文件第3页浏览型号FX6KMJ-3的Datasheet PDF文件第4页浏览型号FX6KMJ-3的Datasheet PDF文件第5页浏览型号FX6KMJ-3的Datasheet PDF文件第6页浏览型号FX6KMJ-3的Datasheet PDF文件第7页 
FX6KMJ-3  
High-Speed Switching Use  
Pch Power MOS FET  
REJ03G0263-0100  
Rev.1.00  
Aug.20.2004  
Features  
Drive voltage : 4 V  
DSS : – 150 V  
DS(ON) (max) : 0.53  
V
r
ID : – 6 A  
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns  
Outline  
TO-220FN  
rain  
Source  
1
Applications  
Motor control, lamp contrnverters, etc.  
Maximum Rati
(Tc = 25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
bol  
VDSS  
VGSS  
ID  
Ratings  
Unit  
Conditions  
–150  
V
V
VGS = 0 V  
±20  
VDS = 0 V  
–6  
A
Drain current (Pulsed)  
Avalanche current (Pulsed)  
Source current  
IDM  
–24  
A
IDA  
–6  
–6  
A
L = 100 µH  
IS  
A
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Isolation voltage  
ISM  
–24  
A
PD  
25  
W
°C  
°C  
V
Tch  
Tstg  
Viso  
– 55 to +150  
– 55 to +150  
2000  
AC 1 minute,  
Terminal to case  
Mass  
2.0  
g
Typical value  
Rev.1.00, Aug.20.2004, page 1 of 6  

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