Datasheet > FX6KMJ-2-A8

FX6KMJ-2-A8

更新时间： 2024-11-19 07:00:51

品牌	Logo	应用领域
瑞萨 - RENESAS		开关
页数	文件大小	规格书
7页	205K
描述
High-Speed Switching Use Pch Power MOS FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FX6KMJ-2-A8 数据手册

FX6KMJ-2

High-Speed Switching Use

Pch Power MOS FET

REJ03G0262-0100

Rev.1.00

Aug.20.2004

Features

•

Drive voltage : 4 V

_DSS: – 100 V

_{DS(ON) (max)}: 0.58 Ω

I_D: – 6 A

Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 80 ns

Outline

TO-220FN

1. Gate

2. Drain

3. Source

Applications

Motor control, lamp control, solenoid control, DC-DC converters, etc.

Maximum Ratings

(Tc = 25°C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

Conditions

–100

V_GS= 0 V

±20

V_DS= 0 V

–6

Drain current (Pulsed)

Avalanche current (Pulsed)

Source current

I_DM

–24

I_DA

–6

L = 100 µH

I_S

Source current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Isolation voltage

I_SM

–24

P_D

°C

Tch

Tstg

Viso

– 55 to +150

2000

AC 1 minute,

Terminal to case

Mass

—

2.0

Typical value

Rev.1.00, Aug.20.2004, page 1 of 6

12 3 4 5 6 7

中文翻译

下载PDF

与FX6KMJ-2-A8相关器件

型号	品牌	获取价格	描述	数据表
FX6KMJ3	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 150V V(BR)DSS \| 6A I(D) \| SOT-186
FX6KMJ-3	MITSUBISHI	获取价格	HIGH-SPEED SWITCHING USE
FX6KMJ-3	RENESAS	获取价格	High-Speed Switching Use Pch Power MOS FET
FX6KMJ-3	POWEREX	获取价格	Power Field-Effect Transistor, 6A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide S
FX6KMJ-3-A8	RENESAS	获取价格	High-Speed Switching Use Pch Power MOS FET
FX6SM06	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 6A I(D) \| TO-247VAR
FX6SM-06	POWEREX	获取价格	Power Field-Effect Transistor, 6A I(D), 60V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal
FX6SM2	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 6A I(D) \| TO-247VAR
FX6SM3	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 150V V(BR)DSS \| 6A I(D) \| TO-247VAR
FX6SM-3	POWEREX	获取价格	Power Field-Effect Transistor, 6A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide S