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FX30KMJ-3-A8 PDF预览

FX30KMJ-3-A8

更新时间: 2024-11-01 07:00:43
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体开关晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
7页 174K
描述
High-Speed Switching Use Pch Power MOS FET

FX30KMJ-3-A8 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:TO-220AB
包装说明:TO-220FN, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.34外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (Abs) (ID):30 A最大漏极电流 (ID):30 A
最大漏源导通电阻:0.111 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):35 W
最大脉冲漏极电流 (IDM):120 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FX30KMJ-3-A8 数据手册

 浏览型号FX30KMJ-3-A8的Datasheet PDF文件第2页浏览型号FX30KMJ-3-A8的Datasheet PDF文件第3页浏览型号FX30KMJ-3-A8的Datasheet PDF文件第4页浏览型号FX30KMJ-3-A8的Datasheet PDF文件第5页浏览型号FX30KMJ-3-A8的Datasheet PDF文件第6页浏览型号FX30KMJ-3-A8的Datasheet PDF文件第7页 
FX30KMJ-3  
High-Speed Switching Use  
Pch Power MOS FET  
REJ03G1448-0200  
(Previous: MEJ02G0291-0101)  
Rev.2.00  
Aug 07, 2006  
Features  
Drive voltage : 4 V  
DSS : –150 V  
DS(ON) (max) : 100 mΩ  
V
r
ID : –30 A  
Integrated Fast Recovery Diode (TYP.) : 100 ns  
Viso : 2000 V  
Outline  
RENESAS Package code: PRSS0003AB-A  
(Package name: TO-220FN)  
1. Gate  
2. Drain  
3. Source  
1
2
Applications  
Motor control, Lamp contrC-DC converters, etc.  
Maximum Ratings  
(Tc = 25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
–150  
Unit  
Conditions  
VGS = 0 V  
V
V
±20  
VDS = 0 V  
–30  
A
Drain current (Pulsed)  
Avalanche drain current (Pulsed)  
Source current  
IDM  
–120  
A
IDA  
–30  
A
L = 30 µH  
IS  
–30  
A
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Isolation voltage  
ISM  
–120  
A
PD  
35  
W
°C  
°C  
V
Tch  
Tstg  
Viso  
– 55 to +150  
– 55 to +150  
2000  
AC for 1 minute,  
Terminal to case  
Mass  
2.0  
g
Typical value  
Rev.2.00 Aug 07, 2006 page 1 of 6  

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