是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 零件包装代码: | TO-220AB |
包装说明: | TO-220FN, 3 PIN | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.34 | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 150 V |
最大漏极电流 (Abs) (ID): | 30 A | 最大漏极电流 (ID): | 30 A |
最大漏源导通电阻: | 0.111 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 35 W |
最大脉冲漏极电流 (IDM): | 120 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FX30SM-03 | POWEREX |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 30V, 0.071ohm, 1-Element, P-Channel, Silicon, Met | |
FX30SM06 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-247VAR | |
FX30SM-06 | POWEREX |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.063ohm, 1-Element, P-Channel, Silicon, Met | |
FX30SM2 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-247VAR | |
FX30SM-2 | POWEREX |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide | |
FX30SM3 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 30A I(D) | TO-247VAR | |
FX30SM-3 | POWEREX |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide | |
FX30SMH03 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | TO-247VAR | |
FX30SMH06 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-247VAR | |
FX30SMH2 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-247VAR |