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FX30KMJ-3 PDF预览

FX30KMJ-3

更新时间: 2024-02-02 19:57:13
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体开关晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
7页 174K
描述
High-Speed Switching Use Pch Power MOS FET

FX30KMJ-3 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220FN包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.34
外壳连接:ISOLATED配置:SINGLE
最小漏源击穿电压:150 V最大漏极电流 (Abs) (ID):30 A
最大漏极电流 (ID):30 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FX30KMJ-3 数据手册

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