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FX30KMJ-03-A8 PDF预览

FX30KMJ-03-A8

更新时间: 2024-11-17 07:00:43
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体开关晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
7页 204K
描述
High-Speed Switching Use Pch Power MOS FET

FX30KMJ-03-A8 技术参数

生命周期:Not Recommended零件包装代码:TO-220AB
包装说明:TO-220FN, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.34Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):30 A
最大漏源导通电阻:0.061 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):120 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FX30KMJ-03-A8 数据手册

 浏览型号FX30KMJ-03-A8的Datasheet PDF文件第2页浏览型号FX30KMJ-03-A8的Datasheet PDF文件第3页浏览型号FX30KMJ-03-A8的Datasheet PDF文件第4页浏览型号FX30KMJ-03-A8的Datasheet PDF文件第5页浏览型号FX30KMJ-03-A8的Datasheet PDF文件第6页浏览型号FX30KMJ-03-A8的Datasheet PDF文件第7页 
FX30KMJ-03  
High-Speed Switching Use  
Pch Power MOS FET  
REJ03G0260-0100  
Rev.1.00  
Aug.20.2004  
Features  
Drive voltage : 4 V  
DSS : – 30 V  
DS(ON) (max) : 61 m  
V
r
ID : – 30 A  
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns  
Outline  
TO-220FN  
rain  
Source  
1
Applications  
Motor control, lamp contrnverters, etc.  
Maximum Rati
(Tc = 25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
bol  
VDSS  
VGSS  
ID  
Ratings  
–30  
Unit  
Conditions  
V
V
VGS = 0 V  
±20  
VDS = 0 V  
–30  
A
Drain current (Pulsed)  
Avalanche current (Pulsed)  
Source current  
IDM  
–120  
A
IDA  
–30  
A
L = 10 µH  
IS  
–30  
A
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Isolation voltage  
ISM  
–120  
A
PD  
25  
W
°C  
°C  
V
Tch  
Tstg  
Viso  
– 55 to +150  
– 55 to +150  
2000  
AC 1 minute,  
Terminal to case  
Mass  
2.0  
g
Typical value  
Rev.1.00, Aug.20.2004, page 1 of 6  

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