FX30KMJ-06

更新时间： 2024-11-30 07:00:43

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体开关晶体管脉冲局域网
页数	文件大小	规格书
7页	174K
描述
High-Speed Switching Use

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中文翻译

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数据手册

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FX30KMJ-06 数据手册

FX30KMJ-06

High-Speed Switching Use

Pch Power MOS FET

REJ03G1446-0200

(Previous: MEJ02G0276-0101)

Rev.2.00

Aug 07, 2006

Features

•

Drive voltage : 4 V

_DSS: –60 V

_{DS(ON) (max)}: 54 mΩ

I_D: –30 A

Integrated Fast Recovery Diode (TYP.) : 55 ns

Viso : 2000 V

Outline

RENESAS Package code: PRSS0003AB-A

(Package name: TO-220FN)

1. Gate

2. Drain

3. Source

Applications

Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

Maximum Ratings

(Tc = 25°C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

–60

Unit

Conditions

V_GS= 0 V

±20

V_DS= 0 V

–30

Drain current (Pulsed)

Avalanche drain current (Pulsed)

Source current

I_DM

–120

I_DA

–30

L = 50 µH

I_S

–30

Source current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Isolation voltage

I_SM

–120

P_D

°C

Tch

Tstg

Viso

– 55 to +150

2000

AC for 1 minute,

Terminal to case

Mass

—

2.0

Typical value

Rev.2.00 Aug 07, 2006 page 1 of 6

12 3 4 5 6 7

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