生命周期: | Not Recommended | 零件包装代码: | TO-220AB |
包装说明: | TO-220FN, 3 PIN | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.28 | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 30 A | 最大漏源导通电阻: | 0.092 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 120 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FX30KMJ2 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 30A I(D) | SOT-186 | |
FX30KMJ-2 | MITSUBISHI |
获取价格 |
HIGH-SPEED SWITCHING USE | |
FX30KMJ-2 | POWEREX |
获取价格 |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE | |
FX30KMJ-2 | RENESAS |
获取价格 |
High-Speed Switching Use Pch Power MOS FET | |
FX30KMJ-2-A8 | RENESAS |
获取价格 |
High-Speed Switching Use Pch Power MOS FET | |
FX30KMJ3 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 30A I(D) | SOT-186 | |
FX30KMJ-3 | MITSUBISHI |
获取价格 |
HIGH-SPEED SWITCHING USE | |
FX30KMJ-3 | POWEREX |
获取价格 |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE | |
FX30KMJ-3 | RENESAS |
获取价格 |
High-Speed Switching Use Pch Power MOS FET | |
FX30KMJ-3-A8 | RENESAS |
获取价格 |
High-Speed Switching Use Pch Power MOS FET |